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  • HONMA FUMITAKA ID: 9000392092232

    Japan Atomic Energy Agency （2010 from CiNii）

    Articles in CiNii:1

    • Successful Completion of Long Term High Temperature Operation of HTTR(High Temperature Engineering Test Reactor):(5)Operation and Maintenance of HTTR （2010）
  • HONMA Fumitaka ID: 9000000886923

    Department of HTTR Project, Japan Atomic Energy Research Institute （2002 from CiNii）

    Articles in CiNii:1

    • Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test （2002）
  • HONMA Fumitaka ID: 9000004778940

    Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University （1995 from CiNii）

    Articles in CiNii:2

    • B doped Si_1-x>Ge_x film growth using ultraclean CVD （1993）
    • Self-Aligned Ultrashallow Junction Formation Using Selective Si_<1-x>Ge_x CVD for Ultra-Small MOSFET （1995）
  • Honma Fumitaka ID: 9000258121840

    Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, 2–1–1 Katahira, Aoba–ku, Sendai 980 （1994 from CiNii）

    Articles in CiNii:1

    • Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex Chemical Vapor Deposition. （1994）
  • Honma Fumitaka ID: 9000401640930

    Articles in CiNii:1

    • Ultrashallow Junction Formation Using Low-Temperature SelectiveSi1-xGexChemical Vapor Deposition （1994）
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