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  • HONSHIO Akira ID: 9000001534330

    Faculty of Science and Technology, Meijo University, 21^<st> century COE "Nano-Factory", Faculty of Science and Technology, Meijo University (2005 from CiNii)

    Articles in CiNii:21

    • Characterization of low dislocation density GaN grown on sapphire R-plane substrate (2005)
    • MOVPE of GaN on R-plane sapphire with high-growth rate (2005)
    • Thermal analysis in nitride-based LED by micro-Raman spectroscopy (2005)
  • Honshio Akira ID: 9000024957650

    Articles in CiNii:1

    • Anisotropically Biaxial Strain in a-Plane AlGaN on GaN Grown on r-Plane Sapphire (2006)
  • Honshio Akira ID: 9000258172235

    Faculty of Science and Technology, High-Tech Research Center, 21st-Century COE Program “Nano Factory”, Meijo University (2004 from CiNii)

    Articles in CiNii:1

    • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • Honshio Akira ID: 9000258181515

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
  • Honshio Akira ID: 9000283193990

    Department of Materials Science and Engineering, 21st-Century COE Program “Nano Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure (2005)
  • Honshio Akira ID: 9000401733473

    Articles in CiNii:1

    • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • Honshio Akira ID: 9000401743743

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
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