Search Results1-20 of  23

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  • HORIGUCHI Seishi ID: 9000020108111

    Anelva Corporation (1988 from CiNii)

    Articles in CiNii:1

    • アブストラクト (1988)
  • HORIGUCHI Seishi ID: 9000021376486

    Anelva Co. (1992 from CiNii)

    Articles in CiNii:1

    • Special Issues/Transparent Conducting Films for LCD Use. Indium Tin Oxide Film Prapared by Magnetron Sputtering. (1992)
  • Horiguchi Seishi ID: 9000252760114

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs (1987)
  • Horiguchi Seishi ID: 9000252958586

    Optoelectronics Joint Research Laboratory (1986 from CiNii)

    Articles in CiNii:1

    • Low-Pressure OMVPE of GaAs Using Triethylgallium (1986)
  • Horiguchi Seishi ID: 9000252958780

    Optoelectronics Joint Research Laboratory (1986 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine (1986)
  • Horiguchi Seishi ID: 9000252959971

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Diagnostics of Gas Reaction Using Trimethylgallium-AsH<SUB>3</SUB> and Triethylgallium-AsH<SUB>3</SUB> in Low-Pressure Organometallic Vapor Phase Epitaxy (1987)
  • Horiguchi Seishi ID: 9000252960136

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As<SUB>4</SUB> (1987)
  • Horiguchi Seishi ID: 9000252961549

    Optoelectronics Joint Research Laboratory (1987 from CiNii)

    Articles in CiNii:1

    • DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH<SUB>3</SUB> (1987)
  • Horiguchi Seishi ID: 9000252964227

    Articles in CiNii:1

    • Diagnostics of Gas Reaction Using Trimethylgallium-AsH<SUB>3</SUB> and Triethylgallium-AsH<SUB>3</SUB> in Low-Pressure Organometallic Vapor Phase Epitaxy (1988)
  • Horiguchi Seishi ID: 9000392702380

    Articles in CiNii:1

    • Diagnostics of Gas Reaction Using Trimethylgallium-AsH<SUB>3</SUB> and Triethylgallium-AsH<SUB>3</SUB> in Low-Pressure Organometallic Vapor Phase Epitaxy (1987)
  • Horiguchi Seishi ID: 9000392703416

    Articles in CiNii:1

    • Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs (1987)
  • Horiguchi Seishi ID: 9000392703500

    Articles in CiNii:1

    • DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH<SUB>3</SUB> (1987)
  • Horiguchi Seishi ID: 9000392710273

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As<SUB>4</SUB> (1987)
  • Horiguchi Seishi ID: 9000392710593

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine (1986)
  • Horiguchi Seishi ID: 9000392711439

    Articles in CiNii:1

    • Diagnostics of Gas Reaction Using Trimethylgallium-AsH<SUB>3</SUB> and Triethylgallium-AsH<SUB>3</SUB> in Low-Pressure Organometallic Vapor Phase Epitaxy (1988)
  • Horiguchi Seishi ID: 9000392712273

    Articles in CiNii:1

    • Low-Pressure OMVPE of GaAs Using Triethylgallium (1986)
  • Horiguchi Seishi ID: 9000401599194

    Articles in CiNii:1

    • Low-Pressure OMVPE of GaAs Using Triethylgallium (1986)
  • Horiguchi Seishi ID: 9000401601457

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine (1986)
  • Horiguchi Seishi ID: 9000401602229

    Articles in CiNii:1

    • Diagnostics of Gas Reaction Using Trimethylgallium-AsH3and Triethylgallium-AsH3in Low-Pressure Organometallic Vapor Phase Epitaxy (1987)
  • Horiguchi Seishi ID: 9000401602472

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4 (1987)
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