Search Results1-20 of  31

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  • HORIOKA Keiji ID: 9000000005346

    ULSI Research Laboratories, Toshiba Corporation (1995 from CiNii)

    Articles in CiNii:2

    • Plasma etching technology (1995)
    • フロロカ-ボンガスのマグネトロン放電プラズマを用いたシリコン酸化膜のエッチング技術 (1993)
  • HORIOKA Keiji ID: 9000000033517

    Technology Center,Applied Material Japan (1998 from CiNii)

    Articles in CiNii:1

    • High Aspect Ratio SiO_2 Etching with Hgih Resist Selectivity Improved by Addition of Organicisilane to Tetrafluoroethyl Frifluoromethyl Ether (HFE 227) (1998)
  • HORIOKA Keiji ID: 9000004969701

    APPLIED MATERIALS JAPAN, INC. (2001 from CiNii)

    Articles in CiNii:1

    • Cooper and CVD SiOC/SiC Integration Technology (2001)
  • HORIOKA Keiji ID: 9000005543967

    ULSI Research Laboratories, Research and Development Center, Toshiba Corporation (1995 from CiNii)

    Articles in CiNii:2

    • Gate Oxide Breakdown Phenomena in Magnetron Plasma (1995)
    • A New High-Density Plasma Etching System Using A Dipole-Ring Magnet (1995)
  • Horioka Keiji ID: 9000020951365

    Department of Chemistry, Shizuoka University (1980 from CiNii)

    Articles in CiNii:1

    • The crystal structure of bis(acetylacetonato)platinum(II). (1980)
  • Horioka Keiji ID: 9000252757412

    Institute of Scientific and Industrial Research, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)–2×1 (1982)
  • Horioka Keiji ID: 9000252765032

    ULSI Research Center, Toshiba Corp. (1992 from CiNii)

    Articles in CiNii:1

    • SiO<SUB>2</SUB> Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas (1992)
  • Horioka Keiji ID: 9000252865437

    大阪大学産業科学研究所 (1980 from CiNii)

    Articles in CiNii:1

    • Spinelloid : A systematics of spinel-related structures obtained under high-pressure conditions (1980)
  • Horioka Keiji ID: 9000252949264

    Articles in CiNii:1

    • Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface (1981)
  • Horioka Keiji ID: 9000252952005

    The Institute of Scientific and Industrial Research, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H (1982)
  • Horioka Keiji ID: 9000252953245

    The Institute of Scientific and Industrial Research, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy (1983)
  • Horioka Keiji ID: 9000252963593

    Toshiba VLSI Research Center (1988 from CiNii)

    Articles in CiNii:1

    • Single Silicon Etching Profile Simulation (1988)
  • Horioka Keiji ID: 9000252980454

    ULSI Research Center, Toshiba Corporation (1992 from CiNii)

    Articles in CiNii:1

    • Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF<SUB>3</SUB> Plasma (1992)
  • Horioka Keiji ID: 9000252987029

    Research and Development Center, Toshiba Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H<SUB>2</SUB>O Downstream Ashing (1993)
  • Horioka Keiji ID: 9000392689988

    Articles in CiNii:1

    • Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H (1982)
  • Horioka Keiji ID: 9000392690078

    Articles in CiNii:1

    • Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)–2×1 (1982)
  • Horioka Keiji ID: 9000392691827

    Articles in CiNii:1

    • Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy (1983)
  • Horioka Keiji ID: 9000392709145

    Articles in CiNii:1

    • Single Silicon Etching Profile Simulation (1988)
  • Horioka Keiji ID: 9000392714941

    Articles in CiNii:1

    • SiO<SUB>2</SUB> Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas (1992)
  • Horioka Keiji ID: 9000392721688

    Articles in CiNii:1

    • Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF<SUB>3</SUB> Plasma (1992)
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