Search Results1-20 of  20

  • HORIUCHI Tadahiko ID: 9000000494479

    ULSI Device Development Laboratories, NEC Corporation, NEC Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Capacitance Coupling Immune, Transient Sensitive Accelerator for Resistive Interconnect Signals of Subquarter Micron ULSI (1996)
  • HORIUCHI Tadahiko ID: 9000001085633

    NEC Electronics Corporation (2007 from CiNii)

    Articles in CiNii:2

    • Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film (2003)
    • A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13μm Complementary Metal Oxide Semiconductor Generation (2007)
  • HORIUCHI Tadahiko ID: 9000001717466

    ULSI Device Development Laboratories, NEC Corporation (1997 from CiNii)

    Articles in CiNii:1

    • A New Post-Metal Threshold Voltage Adjustment Scheme by Hydrogen Ion Implantation (1997)
  • HORIUCHI Tadahiko ID: 9000001718618

    ULSI Device Development Laboratories, NEC Corporation (1998 from CiNii)

    Articles in CiNii:1

    • A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects (1998)
  • HORIUCHI Tadahiko ID: 9000003301123

    Department of Nuclear Engineering,Kyoto University (1983 from CiNii)

    Articles in CiNii:1

    • Charge Transfer Cross Sections for Slow Ne^<2〜5+> Ions on He and H_2 (1983)
  • HORIUCHI Tadahiko ID: 9000003717699

    Advanced Technology Development Division, NEC Electronics Corporation (2002 from CiNii)

    Articles in CiNii:5

    • A Finite Element Analysis of Process-Induced Stress in Scaled-Down MOSFETs : Finite Element Stress Analysis and Evaluation of its Validity by Using Convergent-Beam Electron Diffraction (2002)
    • Development of Load-Less Four-Transistor SRAM Macro(1) : A Four-Transistor SRAM cell operation and circuit techniques for stable static data hold (2000)
    • Development of Load-Less 4-Transistor SRAM Macro(2) : Reduction of bit-line coupling capacitance (2000)
  • HORIUCHI Tadahiko ID: 9000004752851

    ULSI device development department, NEC Electron Device (2000 from CiNii)

    Articles in CiNii:14

    • A 300MHz Video Signal Parallel-Pipelined Processor (1993)
    • A 0.25μm CMOS 0.9V 100MHz DSP Core (1995)
    • 100MHz, 0.55mm^2, 2mW, 16-b Stacked-CMOS Multiplier-Accumulator (1995)
  • HORIUCHI Tadahiko ID: 9000004912776

    NEC Electron Devices ULSI Device Development Division (2000 from CiNii)

    Articles in CiNii:7

    • C49-to-C54 Phase Transition in TiSi_2 Process (1995)
    • Ti salicide process with Ar ambient RTA using TiN/Ti layer (1996)
    • A 5-Mask CMOS Technology utilizing SOI Substrate (1997)
  • Horiuchi Tadahiko ID: 9000004810198

    ULSI Device Development Lab., NEC Corporation (1994 from CiNii)

    Articles in CiNii:1

    • A PLL-Based Programmable Clock Generator with 50- to 350-MHz Oscillating Range for Video Signal Processors (Special Issue on Multimedia, Analog and Processing LSIs) (1994)
  • Horiuchi Tadahiko ID: 9000252952855

    Department of Nuclear Engineering, Faculty of Engineering, Kyoto University (1983 from CiNii)

    Articles in CiNii:1

    • Microchannel Plate Position Sensitive Detector System for Charge Analysis of Low Energy Heavy Ions (1983)
  • Horiuchi Tadahiko ID: 9000254558866

    Department of Nuclear Engineering, Kyoto University (1983 from CiNii)

    Articles in CiNii:1

    • Charge Transfer Cross Sections for Slow Ne<SUP>2∼5+</SUP> Ions on He and H<SUB>2</SUB> (1983)
  • Horiuchi Tadahiko ID: 9000283260152

    Articles in CiNii:1

    • A Statistical Model for Collisions of Multiple Electron Transfer (1983)
  • Horiuchi Tadahiko ID: 9000392694487

    Articles in CiNii:1

    • Microchannel Plate Position Sensitive Detector System for Charge Analysis of Low Energy Heavy Ions (1983)
  • Horiuchi Tadahiko ID: 9000401593134

    Articles in CiNii:1

    • Microchannel Plate Position Sensitive Detector System for Charge Analysis of Low Energy Heavy Ions (1983)
  • Horiuchi Tadahiko ID: 9000401671287

    Articles in CiNii:1

    • Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics (1998)
  • Horiuchi Tadahiko ID: 9000401672981

    Articles in CiNii:1

    • Sensitivity Coefficients of Pirani Gauge for Various Atoms and Molecules (1998)
  • Horiuchi Tadahiko ID: 9000401718928

    Articles in CiNii:1

    • 2003-09-15 (2003)
  • Horiuchi Tadahiko ID: 9000401764568

    Articles in CiNii:1

    • 2007-03-08 (2007)
  • Horiuchi Tadahiko ID: 9000401850267

    Department of Nuclear Engineering, Kyoto University (1983 from CiNii)

    Articles in CiNii:1

    • 1983-12-15 (1983)
  • Horiuchi Tadahiko ID: 9000401850500

    Department of Nuclear Engineering, Kyoto University (1983 from CiNii)

    Articles in CiNii:1

    • A Statistical Model for Collisions of Multiple Electron Transfer (1983)
Page Top