Search Results1-20 of  27

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  • Hoshino Toshiharu ID: 9000398825353

    Articles in CiNii:1

    • Real Space Cluster Expansion for Total Energies of Pd-Rich PdX (X = Rh, Ru) Alloys, Based on Full-Potential KKR Calculations : An Approach from a Dilute Limit (2018)
  • HOSHINO Toshiharu ID: 9000000627920

    Department of Applied Physics, Faculty of Engineering, Shizuoka University (2001 from CiNii)

    Articles in CiNii:2

    • Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: I. Vacancy Formation Energies in fcc and bcc Metals (2001)
    • Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: II. Impurity-Impurity Interaction Energies and Phase Diagrams (2001)
  • HOSHINO Toshiharu ID: 9000257969434

    Optoelectronics and Nanostructure Science, Shizuoka University (2006 from CiNii)

    Articles in CiNii:1

    • First-principles calculation of interaction energies between solutes and/or vacancies and the prediction of atomistic behaviors of microalloying elements in aluminum alloys (2006)
  • HOSHINO Toshiharu ID: 9000364765903

    Department of General Education, College of Engineering Shizuoka University (1991 from CiNii)

    Articles in CiNii:4

    • Hyperfine Interactions for Impurities in Semiconductors : (1991)
    • Extended Huckel Study of the Localized Centers in Silicon (1975)
    • Localized Orbital Approach to Electronic Structure of Covalent Semiconductors-1-Energy Bands of Diamond-Type Crystals (1979)
  • HOSHONO Toshiharu ID: 9000003292647

    R & D Laboratories-1, Nippon Steel Corporation (1992 from CiNii)

    Articles in CiNii:3

    • Ground State of Ga and Zn Impurities in Si (1979)
    • Localized Orbital Approach to Electronic Structure of Covalent Semiconductors-2-The Impurity States in Silicon (1980)
    • Birefringence Study on Structural and Magnetic Phase Transitions pf RbMnBr_3 (1992)
  • Hoshino Toshiharu ID: 9000016916141

    Articles in CiNii:4

    • Full-potential KKR calculations for vacancies in Al: Screening effect and many-body interactions (2004)
    • Local-density-functional calculations for defect interactions in Al (1996)
    • Interaction energies of In111 perturbed-angular-correlation probes with 3d and 4sp impurities in Ag, Pd, and Rh (1996)
  • Hoshino Toshiharu ID: 9000252749424

    Articles in CiNii:1

    • Local structures and structural phase change in Ni-Zr-Nb glassy alloys composed of Ni5Zr5Nb3 icosahedral clusters (2013)
  • Hoshino Toshiharu ID: 9000252953115

    College of Engineering, Shizuoka University (1983 from CiNii)

    Articles in CiNii:1

    • On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge (1983)
  • Hoshino Toshiharu ID: 9000254130428

    Department of Physics, Osaka University (1979 from CiNii)

    Articles in CiNii:1

    • Ground State of Ga and Zn Impurities in Si (1979)
  • Hoshino Toshiharu ID: 9000254131012

    Department of Physics, Osaka University (1979 from CiNii)

    Articles in CiNii:1

    • Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. I. Energy Bands of Diamond-Type Crystals (1979)
  • Hoshino Toshiharu ID: 9000254558400

    Department of Physics, Faculty of Science, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • On the Electronic Structure of the Polar Surface of Compound Crystals (1982)
  • Hoshino Toshiharu ID: 9000256659488

    Department of Applied Physics, Faculty of Engineering, Shizuoka University (1998 from CiNii)

    Articles in CiNii:1

    • Equilibrium Lattice Parameters, Bulk Moduli, and Vacancy Formation Energies in Metals: First-principles Calculations by the FP-KKR-Green-Function Method. (1998)
  • Hoshino Toshiharu ID: 9000257838610

    Department of Applied Physics, Faculty of Engineeing, Shizuoka University (2001 from CiNii)

    Articles in CiNii:1

    • Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: II. Impurity-Impurity Interaction Energies and Phase Diagrams (2001)
  • Hoshino Toshiharu ID: 9000257838612

    Department of Applied Physics, Faculty of Engineering, Shizuoka University (2001 from CiNii)

    Articles in CiNii:1

    • Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: I. Vacancy Formation Energies in fcc and bcc Metals (2001)
  • Hoshino Toshiharu ID: 9000382672537

    Faculty of Engineering, Shizuoka University (2018 from CiNii)

    Articles in CiNii:1

    • Ab-Initio Calculations for Solvus Temperatures of Pd-Rich PdRu Alloys: Real-Space Cluster Expansion and Cluster Variation Method (2018)
  • Hoshino Toshiharu ID: 9000390885928

    Faculty of Engineering, Shizuoka University (2018 from CiNii)

    Articles in CiNii:1

    • Interaction Energies Among Rh Impurities in Pd and Solvus Temperatures of Pd-Rich PdRh Alloys (2018)
  • Hoshino Toshiharu ID: 9000392689963

    Articles in CiNii:1

    • On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge (1983)
  • Hoshino Toshiharu ID: 9000392807761

    Department of Applied Physics, Faculty of Engineering, Shizuoka University (1999 from CiNii)

    Articles in CiNii:1

    • Impurity-Impurity Interaction Energies in Cu, Ni, Ag, and Pd and Fundamental Features of Phase Diagrams of Binary Alloys and Solid Solubility Limit of Impurities: KKR-Green’s Function Method and Cluster Variation Method (1999)
  • Hoshino Toshiharu ID: 9000401592272

    Articles in CiNii:1

    • On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge (1983)
  • Hoshino Toshiharu ID: 9000401842190

    Department of Physics, Osaka University (1979 from CiNii)

    Articles in CiNii:1

    • Ground State of Ga and Zn Impurities in Si (1979)
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