Search Results1-20 of  57

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  • HOSOKAWA Naokichi ID: 9000003140605

    Anelva Corporation (2004 from CiNii)

    Articles in CiNii:13

    • Growth and Properties of Titanium Nitride and Titanium Films by Chemical-Vapor-Deposition using High Density Plasma (1995)
    • The Study of Oxygen-doping Mechanisms in ITO Sputtering using the Quantitative Analysis Method (1997)
    • Development of a High-Vacuum Planar Magnetron Discharge (1992)
  • HOSOKAWA Naokichi ID: 9000005540282

    ANELVA Corporation (1979 from CiNii)

    Articles in CiNii:1

    • Relationship between Energetic Neutrals and Impurities in Sputtered Films (1979)
  • HOSOKAWA Naokichi ID: 9000005541885

    Process Development Laboratiory, Anelva Corporation (2000 from CiNii)

    Articles in CiNii:3

    • Reaction of Copper Oxide and β-Diketone for In situ Cleaning of Metal Copper in a Copper Chemical Vapor Deposition Reactor (2000)
    • Superiority of O(^1D) atom for solid and gas phase reactions over O(^3P) atom (1993)
    • Properties of Atomic Oxygen obtained from Thermodynamically Non-equilibrium High Temperature Plasma (1991)
  • HOSOKAWA Naokichi ID: 9000019955140

    ANELVA Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Step coverage of Al films prepared by DC magnetron sputtering using the dual-structure target. (1985)
  • HOSOKAWA Naokichi ID: 9000019956927

    ANELVA Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Characteristics of silicide thin films prepared by sputtering using hot pressed target. (1985)
  • HOSOKAWA Naokichi ID: 9000020063056

    ANELVA Corporation (1987 from CiNii)

    Articles in CiNii:1

    • Caracteristics of TiN thin films prepared by inline sputtering system for VLSI. (1987)
  • HOSOKAWA Naokichi ID: 9000020073402

    Anelva Corporation (1981 from CiNii)

    Articles in CiNii:1

    • High-rate Magnetron RF Sputtering of Tantalum (1981)
  • HOSOKAWA Naokichi ID: 9000020076085

    Anelva Corporation (1980 from CiNii)

    Articles in CiNii:1

    • Preparation and Properties of Carbon Films with Magnetron Sputtering (1980)
  • HOSOKAWA Naokichi ID: 9000020076185

    ANELVA Corporation (1980 from CiNii)

    Articles in CiNii:1

    • X-ray Analysis of Alminum Films Deposited by Magnetron Sputtering (1980)
  • HOSOKAWA Naokichi ID: 9000020096772

    Vacuum Engineering, Nippon Electric Varian Ltd. (1973 from CiNii)

    Articles in CiNii:1

    • The Effect of rf-Power Dissipation on the Temperature of Substrate in a rf-Sputtering System (1973)
  • HOSOKAWA Naokichi ID: 9000020108163

    Anelva Corporation (1988 from CiNii)

    Articles in CiNii:1

    • アブストラクト (1988)
  • HOSOKAWA Naokichi ID: 9000020158805

    ANELVA Corporation (1987 from CiNii)

    Articles in CiNii:1

    • アブストラクト (1987)
  • HOSOKAWA Naokichi ID: 9000020265979

    ANELVA Corporation (1990 from CiNii)

    Articles in CiNii:1

    • Growth of single crystlline Al films by gas-temperature-controlled CVD. (1990)
  • HOSOKAWA Naokichi ID: 9000020276287

    ANELVA Corporation (1986 from CiNii)

    Articles in CiNii:1

    • アブストラクト (1986)
  • HOSOKAWA Naokichi ID: 9000020300769

    Recearch and Development Div., ANELVA Corp. (1990 from CiNii)

    Articles in CiNii:1

    • Ion analysis of a compact ECR ion source. (1990)
  • HOSOKAWA Naokichi ID: 9000021430110

    Vacuum Division, Nippon Electric Varian Ltd. (1976 from CiNii)

    Articles in CiNii:1

    • New Magnetron-Sputtering Methods and their Application for Electronic Device Fabrication (1976)
  • HOSOKAWA Naokichi ID: 9000021456465

    Vacuum Division, Nippon Electric Varian Ltd. (1976 from CiNii)

    Articles in CiNii:1

    • Effect of Vacuum Quality on the Deposition Rate of SiO<SUB>2</SUB> in an rf-Sputtering System (1976)
  • HOSOKAWA Naokichi ID: 9000021457308

    Nippon Electric Varian Ltd. (1975 from CiNii)

    Articles in CiNii:1

    • The Ion Current Characteristics of Cathode Circuit in a rf Ion Plating System (1975)
  • HOSOKAWA Naokichi ID: 9000021458179

    Nippon Electric Varian Ltd. (1971 from CiNii)

    Articles in CiNii:1

    • Sputtering System for Thin Film Deposition (1971)
  • HOSOKAWA Naokichi ID: 9000021466127

    R&D div., Anelva corp. (1995 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1995)
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