Search Results1-20 of  31

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  • HWANG Cheol Seong ID: 9000001098126

    School of Mat. Sci. and Eng., Seoul National Univ (2003 from CiNii)

    Articles in CiNii:1

    • Dielectric and Electromechanical Properties of Pb(Zr,Ti)O_3 Thin Films for Piezo-Microelectromechanical System Devices (2003)
  • HWANG Cheol Seong ID: 9000004780396

    School of Material Science and Engineering, Seoul National University (1999 from CiNii)

    Articles in CiNii:16

    • Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications (1996)
    • Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory (1998)
    • A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM (1997)
  • HWANG Cheol Seong ID: 9000004968106

    School of Material Science and Engineering, Seoul National University (1999 from CiNii)

    Articles in CiNii:2

    • Optimization of Postannealing Process for Low Temperature MOCVD (Ba,Sr)TiO_3 Thin Films (1999)
    • Optimization of Postannealing Process for Low Temperature MOCVD (Ba, Sr)TiO_3 Thin Films (1999)
  • HWANG Cheol Seong ID: 9000015594383

    School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University (2003 from CiNii)

    Articles in CiNii:1

    • Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer (2003)
  • HWANG Cheol Seong ID: 9000015641377

    School of Materials Science & Engineering, Seoul National University (2003 from CiNii)

    Articles in CiNii:1

    • Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al_2O_3p-Si Metal-Oxide-Semiconductor Capacitor (2003)
  • HWANG Cheol Seong ID: 9000019236653

    WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University (2012 from CiNii)

    Articles in CiNii:1

    • Ab initio Calculations on the Atomic and Electronic Structures of Oxygen-Doped Hexagonal Ge_2Sb_2Te_5 (2012)
  • HWANG Cheol Seong ID: 9000107382599

    School of Materials Science and Engineering, Seoul National University (2004 from CiNii)

    Articles in CiNii:1

    • Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition (2004)
  • HWANG Cheol Seong ID: 9000265571228

    Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University (2013 from CiNii)

    Articles in CiNii:1

    • Electrode Engineering for Improving Resistance Switching of Sb_2O_5 Films (2013)
  • Hwang Cheol Seong ID: 9000241175769

    Seoul National Univ. (2013 from CiNii)

    Articles in CiNii:1

    • 27pXZB-10 First-principles analysis of ferroelectric nanocapacitors (2013)
  • Hwang Cheol Seong ID: 9000258129872

    Semiconductor R&D center, Samsung electronics Co., Ltd., San #24 Nongseo–lee, Kiheung–eup, Yongin–gun, Kyungki–do 449–900, Korea (1995 from CiNii)

    Articles in CiNii:1

    • Deposition and Electrical Characterization of Very Thin SrTiO3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application. (1995)
  • Hwang Cheol Seong ID: 9000258131494

    SAMSUNG Electronics Co., Semiconductor R&D Center, Memory Process Development Team 2, San #24, Nongseo–lee Kiheung–eup, Yongin–gun, Kyungki–do, 449–900, Korea (1996 from CiNii)

    Articles in CiNii:1

    • Fabrication and Electrical Characterization of Pt/(Ba,Sr)TiO3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications. (1996)
  • Hwang Cheol Seong ID: 9000258134150

    Semiconductor R&D Center, SAMSUNG Electronics Co., San #24, Nongseo–lee, Kiheung–eup, Yongin–si, Kyungki–do, 449–900, Korea (1997 from CiNii)

    Articles in CiNii:1

    • Deposition Characteristics of (Ba, Sr)TiO3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures. (1997)
  • Hwang Cheol Seong ID: 9000258136280

    Semiconductor R&D Center, SAMSUNG Electronics Co., San #24, Nongseo–Ri, Kiheung–Eup, Yongin–Si, Kyungki–Do, 449–900 Korea (1997 from CiNii)

    Articles in CiNii:1

    • Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering. (1997)
  • Hwang Cheol Seong ID: 9000258137497

    Semiconductor R&D Center, SAMSUNG Electronics Co., Yongin–Si, Kyungki–Do 449–900, Korea (1997 from CiNii)

    Articles in CiNii:1

    • Structural and Electrical Properties of Ba0.5Sr0.5TiO3 Films on Ir and IrO2 Electrodes. (1997)
  • Hwang Cheol Seong ID: 9000258143387

    School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea (1998 from CiNii)

    Articles in CiNii:1

    • Control of the Microstructure of (Pb,La)TiO3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory. (1998)
  • Hwang Cheol Seong ID: 9000258165617

    School of Materials Science & Engineering, Seoul National University (2003 from CiNii)

    Articles in CiNii:1

    • Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal-Oxide-Semiconductor Capacitor. (2003)
  • Hwang Cheol Seong ID: 9000258169387

    School of Mat. Sci. and Eng., Seoul National Univ. (2003 from CiNii)

    Articles in CiNii:1

    • Dielectric and Electromechanical Properties of Pb(Zr,Ti)O3 Thin Films for Piezo-Microelectromechanical System Devices (2003)
  • Hwang Cheol Seong ID: 9000258176785

    School of Materials Science and Engineering, Seoul National University (2004 from CiNii)

    Articles in CiNii:1

    • Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition (2004)
  • Hwang Cheol Seong ID: 9000283187652

    School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University (2003 from CiNii)

    Articles in CiNii:1

    • Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer. (2003)
  • Hwang Cheol Seong ID: 9000401573315

    Articles in CiNii:1

    • Ab initioCalculations on the Atomic and Electronic Structures of Oxygen-Doped Hexagonal Ge$_{2}$Sb$_{2}$Te$_{5}$ (2012)
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