Search Results1-20 of  26

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  • HADA Hiromitsu ID: 9000001719335

    System Devices and Fundamental Research, NEC Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs (2000)
  • HADA Hiromitsu ID: 9000001790289

    System Devices Research Laboratories, NEC Corporation (2006 from CiNii)

    Articles in CiNii:2

    • High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl_2 Plasma (2006)
    • Magnetically Damage-free Etching of MTJ Film for Future 0.24-μm-rule MRAMs (2006)
  • HADA Hiromitsu ID: 9000004753177

    Articles in CiNii:9

    • Basic characteristics of ferroelectric random access memory and its future application (2001)
    • Thin film technology for creating new functionality (2002)
    • A High-endurance 96-Kbit FeRAM Embedded in a Smart Card LSI Using Ir/IrO2/PZT(MOCVD)/Ir Ferroelectric Capacitors (2001)
  • HADA Hiromitsu ID: 9000004871374

    NEC Corporation, Device Platforms Research Laboratories (2007 from CiNii)

    Articles in CiNii:6

    • 0.25μm FeRAM with CMVP (Capacitor-on-Metal/Via-Stacked-Plug) Memory Cell (1999)
    • Improvement of Thermal Stability of MRAM Device with SiN Protective Film Deposited by HDP CVD (2007)
    • TiN as a Phosphorus Outdiffusion Barrier Layer for WSi_x/Doped-Polysilicon Structures (Special Issue on Sub-Half Micron Si Device and Process Technologies) (1993)
  • HADA Hiromitsu ID: 9000006202305

    System Devices Research Laboratories, NEC Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Non-volatile Semiconductor Memories (2006)
  • HADA Hiromitsu ID: 9000014441395

    Articles in CiNii:20

    • Features and Technologies of MRAM (2004)
    • Magnetization reversal of MTJs using a Ni_xFe_<1-x>/Al-oxide/Ta free layer with high thermal stability (2004)
    • Process Integration of 4Mb-MRAM (2006)
  • HADA Hiromitsu ID: 9000253327665

    Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation (2001 from CiNii)

    Articles in CiNii:1

    • Basic characteristics of ferroelectric random access memory and its future application (2001)
  • Hada Hiromitsu ID: 9000025068143

    Articles in CiNii:1

    • Development of hard mask process on magnetic tunnel junction for a 4-Mbit magnetic random access memory (2007)
  • Hada Hiromitsu ID: 9000062824865

    Articles in CiNii:1

    • Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices (2008)
  • Hada Hiromitsu ID: 9000070005195

    Articles in CiNii:1

    • Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition (2008)
  • Hada Hiromitsu ID: 9000072107349

    Articles in CiNii:1

    • Switching-Field Stabilization against Effects of High-Temperature Annealing in Magnetic Tunnel Junctions using Thermally Reliable NixFe100-x/Al-Oxide/Ta Free Layer (2006)
  • Hada Hiromitsu ID: 9000258151566

    Silicon Systems Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229-1198, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Characteristics of 0.25.MU.m Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O3 Capacitor on a Metal/via-Stacked Plug. (2000)
  • Hada Hiromitsu ID: 9000401688308

    Articles in CiNii:1

    • 2000-04-30 (2000)
  • Hada Hiromitsu ID: 9000401790658

    Articles in CiNii:1

    • Etching Magnetic Tunnel Junction with Metal Etchers (2010)
  • Hada Hiromitsu ID: 9000401795994

    Articles in CiNii:1

    • Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process (2011)
  • Hada Hiromitsu ID: 9000401798907

    Articles in CiNii:1

    • ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device (2011)
  • Hada Hiromitsu ID: 9000401977601

    Articles in CiNii:1

    • An atom-switch-based field-programmable gate array with optimized driving capability buffer (2019)
  • Hada Hiromitsu ID: 9000401990398

    Articles in CiNii:1

    • Low-power embedded read-only memory using atom switch and silicon-on-thin-buried-oxide transistor (2015)
  • Hada Hiromitsu ID: 9000401996869

    Articles in CiNii:1

    • Improved Resistive Switching Characteristics of NiO Resistance Random-Access Memory Using Post-Plasma-Oxidation Process (2011)
  • Hada Hiromitsu ID: 9000401999776

    Articles in CiNii:1

    • ON-State Reliability of Solid-Electrolyte Switch under Pulsed Alternating Current Stress for Programmable Logic Device (2011)
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