Search Results1-17 of  17

  • CHOWDHURY Anisul Haque ID: 9000001566832

    Articles in CiNii:4

    • The Reference Value of Erythrocyte Sedimentation Rate for Differential Diagnosis of Rheumatic Fever Among Bangladeshi Children (1996)
    • A Brief Review of Epidemiological Studies on Ischemic Heart Disease in Japan (1996)
    • Secular Trends in Death Rates from Ischemic Heart Diseases and Cerebrovascular Diseases in Selected Countries (1996)
  • HAQUE M. Anisul ID: 9000254958723

    Institute of Water and Flood Management, Bangladesh University of Engineering and Technology (2004 from CiNii)

    Articles in CiNii:1

    • SCOURING AROUND SPUR-DIKES IN ALLUVIAL FLOODPLAIN RIVERS (2004)
  • HAQUE S. Anisul ID: 9000001508129

    Dept. of Materials Science and Engineering, Graduate School of Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Appropriate ferromagnetic nanodots representing binary logics for forthcoming spin-computing techniques (2003)
  • HAQUE A. M. Anisul ID: 9000242935049

    School of Engineering Tokai University. (1994 from CiNii)

    Articles in CiNii:1

    • 1201 An Experimental Study on Bending Behavior of Partially Prestressed Concrete Members with Fiber Reinforced Plastic (1994)
  • HAQUE Anisul ID: 9000004960410

    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology (2004 from CiNii)

    Articles in CiNii:8

    • RT-CW Operation of GaInAsP/InP Strain-Compensated Multiple Quantum-Wire Lasers Fabricated by Dry-Etching and Regrowth (2003)
    • Analysis of Band Structure and Polarization Anisotropy of strained Quantum-Wire Structure (2003)
    • GaInAsP/InP Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Regrowth Method (2004)
  • HAQUE Anisul ID: 9000004960584

    Research Center for Quatum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:3

    • Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method (2003)
    • GaInAsP/InP Long Wavelength Quantum-Wire Lasers (2003)
    • GaInAsP/InP Long Wavelength Quantum-Wire Lasers (2003)
  • HAQUE Anisul ID: 9000107314451

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes (2004)
  • HAQUE Anisul ID: 9000107377487

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • HAQUE Anisul ID: 9000254959037

    Institute of Water and Flood Management (IWFM), Bangladesh University of Engineering and Technology (BUET) (2006 from CiNii)

    Articles in CiNii:1

    • PREDICTION OF LOCAL SCOUR DEPTH AROUND BANDAL-LIKE STRUCTURES (2006)
  • Haque Syed Anisul ID: 9000003209953

    JAIST Materials Sci. (2001 from CiNii)

    Articles in CiNii:4

    • Temperature dependence of saturation magnetization in Ni/GaAs (2000)
    • Magentization and ESR Measurements for Micron Size Ni Stripes on GaAs Substrate (2001)
    • Magnetic interaction at the interface of Ni/GaAs (2001)
  • Haque Anisul ID: 9000025084747

    Articles in CiNii:1

    • Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP quantum-wire structures (2008)
  • Haque Anisul ID: 9000258167973

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • Haque Anisul ID: 9000258168494

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology|CREST, JST, Kawaguchi Center Building (2003 from CiNii)

    Articles in CiNii:1

    • Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method (2003)
  • Haque Anisul ID: 9000258173356

    Research Center for Quantum Effect Electronics, Tokyo Institute of Technology|CREST, Japan Science and Technology Agency, Kawaguchi Center Building (2004 from CiNii)

    Articles in CiNii:1

    • GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes (2004)
  • Haque Anisul ID: 9000401716620

    Articles in CiNii:1

    • Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth (2003)
  • Haque Anisul ID: 9000401723352

    Articles in CiNii:1

    • Room Temperature-Continuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method (2003)
  • Haque Anisul ID: 9000401726447

    Articles in CiNii:1

    • GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes (2004)
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