Search Results1-20 of  58

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  • Higashiwaki M. ID: 9000009438533

    Articles in CiNii:1

    • High-Density GaAs/(GaAs)2(AlAs)2 Quantum Wires Naturally Formed on(775)B-oriented GaAs Substrates by Molecular Beam Epitaxy (1998)
  • Higashiwaki Masataka ID: 9000024978894

    Articles in CiNii:1

    • High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors (2006)
  • HIGASHIWAKI M. ID: 9000004746764

    National Institute of Information and Communications Technology (NICT) (2009 from CiNii)

    Articles in CiNii:25

    • Fabrication of AlGaN/GaN HEMT Micro Hall Sensors for High Temperature Operation (2004)
    • Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements (2006)
    • Trends in Millimeter-Wave Communication Systems and Device Technologies (2001)
  • HIGASHIWAKI Masataka ID: 9000004822676

    National Institute of Information and Communications Technology (2008 from CiNii)

    Articles in CiNii:8

    • AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190GHz (2008)
    • Development of High-Frequency GaN HFETs for Millimeter-Wave Applications (2008)
    • High rf Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (2001)
  • HIGASHIWAKI Masataka ID: 9000005908896

    Communications Research Laboratory (2002 from CiNii)

    Articles in CiNii:1

    • High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy (2002)
  • HIGASHIWAKI Masataka ID: 9000017504724

    Advanced ICT Research Institute, National Institute of Information and Communications Technology:PRESTO, Japan Science and Technology Agency (JST) (2011 from CiNii)

    Articles in CiNii:2

    • Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs (2010)
    • Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers : Effects of AlGaN barrier thinning (2011)
  • HIGASHIWAKI Masataka ID: 9000107308250

    National Institute of Information and Communications Technology (2005 from CiNii)

    Articles in CiNii:1

    • AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152GHz on Sapphire Substrates (2005)
  • HIGASHIWAKI Masataka ID: 9000107341384

    National Institute of Information and Communications Technology (2006 from CiNii)

    Articles in CiNii:1

    • 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181GHz (2006)
  • HIGASHIWAKI Masataka ID: 9000107341892

    Department of Electrical and Computer Engineering, University of California (2009 from CiNii)

    Articles in CiNii:1

    • Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009)
  • HIGASHIWAKI Masataka ID: 9000107347982

    National Institute of Information and Communications Technology (2004 from CiNii)

    Articles in CiNii:1

    • Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy (2004)
  • HIGASHIWAKI Masataka ID: 9000107353840

    National Institute of Information and Communications Technology (2004 from CiNii)

    Articles in CiNii:1

    • InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy (2004)
  • HIGASHIWAKI Masataka ID: 9000107359962

    Advanced ICT Research Institute, National Institute of Information and Communications Technology (2011 from CiNii)

    Articles in CiNii:1

    • Small-signal and 30GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers : Effects of AlGaN barrier thinning (2011)
  • HIGASHIWAKI Masataka ID: 9000107389240

    Communications Research Laboratory (2004 from CiNii)

    Articles in CiNii:1

    • Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance (2004)
  • HIGASHIWAKI Masataka ID: 9000241154279

    Tokyo University of Agriculture and Technology (2015 from CiNii)

    Articles in CiNii:6

    • Replacing SiC with Gallium Oxide to Achieve Cheaper and Higher-Performance Power Devices (2012)
    • Gallium Oxide Transistors (2012)
    • Pt/β-Ga_2O_3 Schottky Barrier Diodes Using Single-Crystal β-Ga_2O_3 Substrates (2012)
  • HIGASHIWAKI Masataka ID: 9000251014412

    Advanced ICT Research Institute, National Institute of Information and Communications Technology (2014 from CiNii)

    Articles in CiNii:1

    • Current Status and Future Prospect of R & D on Gallium Oxide Power Devices (2014)
  • HIGASHIWAKI Masataka ID: 9000251015615

    National Institute of Information and Communications Technology (NICT) (2013 from CiNii)

    Articles in CiNii:1

    • Characterization of Al_2O_3/n-Ga_2O_3 MOS diodes (2013)
  • HIGASHIWAKI Masataka ID: 9000261697179

    Green ICT Device Advanced Development Center, Advanced ICT Research Institute, National Institute of Information and Communications Technology (2014 from CiNii)

    Articles in CiNii:1

    • Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation (2014)
  • HIGASHIWAKI Masataka ID: 9000261697738

    Green ICT Device Advanced Development Center, Advanced ICT Research Institute, National Institute of Information and Communications Technology (2014 from CiNii)

    Articles in CiNii:1

    • Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation (2014)
  • HIGASHIWAKI Masataka ID: 9000263068772

    National Institute of Information and Communications Technology (2013 from CiNii)

    Articles in CiNii:1

    • Si-lon Implantation Doping in β-Ga_2O_3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts (2013)
  • HIGASHIWAKI Masataka ID: 9000283228111

    National Institute of Information and Communications Technology (2014 from CiNii)

    Articles in CiNii:1

    • Crystal Growth and Device Application of Gallium Oxide (Ga<sub>2</sub>O<sub>3</sub>) (2014)
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