Search Results1-20 of  28

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  • Hirai Tadahiko ID: 9000241498732

    Articles in CiNii:1

    • A Numerical Device Model and Approach to Degradation Mechanisms in Organic Light Emitting Diodes (Special Issue : Solid State Devices and Materials) (2013)
  • HIRAI Tadahiko ID: 9000005543047

    Department of Materials Science and Engineering, Graduate School of Science and Technology, Shinshu University:LCD Division, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:19

    • Initial Stage and Growth Process of Ceria, Yttria-Stabilized-Zirconia and Ceria-Zirconia Mixture Thin Films on Si(100) Surfaces (1997)
    • Preparation of Perovskite Oriented PbZr_xTi_<1-x>O_3 Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Deposition Method (1995)
    • Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with CeO_2 Buffer Layer (1995)
  • HIRAI Tadahiko ID: 9000005908705

    Semiconductor Device Development Center, Canon Inc. (2002 from CiNii)

    Articles in CiNii:1

    • Modeling and Simulation of Tunneling Current in Oxygen-Plasma-Treated Aluminum Oxide Insulating Barrier for Magnetic Tunnel Junction (2002)
  • Hirai Tadahiko ID: 9000252987846

    LSI Laboratories, Asahi Chemical Industry Co., Ltd. (1993 from CiNii)

    Articles in CiNii:1

    • Preparation of Tetragonal Perovskite Single Phase PbTiO<SUB>3</SUB> Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introducing Pb and Ti Precursors (1993)
  • Hirai Tadahiko ID: 9000258020100

    CSIRO Materials Science and Engineering (2012 from CiNii)

    Articles in CiNii:1

    • Solution Processable Phosphorescent Red Luminescent Polymer for OLED Devices (2012)
  • Hirai Tadahiko ID: 9000258123070

    LSI Laboratories, Asahi Chemical Industry Co., Ltd., Samejima, Fuji, Shizuoka 416 (1994 from CiNii)

    Articles in CiNii:1

    • c-Axis-Oriented Pb(Zr, Ti)O3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method. (1994)
  • Hirai Tadahiko ID: 9000258136924

    LSI Laboratories, Asahi Chemical Industry Co., Ltd., 2–1 Samejima, Fuji, Shizuoka 416, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Influence of Ce Content on Crystal and Electrical Properties of CexZ1-xO2 Thin Films on Si(100) Substrates. (1997)
  • Hirai Tadahiko ID: 9000258137145

    The School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku–ku, Tokyo 169, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Effect of Reducing Process Temperature for Preparing SrBi2Ta2O9 in a Metal/Ferroelectric/Semiconductor Structure. (1997)
  • Hirai Tadahiko ID: 9000258146937

    The School of Science and Engineering, Waseda University, 3–4–1 Ohkubo, Shinjuku, Tokyo 169–8555, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer. (1999)
  • Hirai Tadahiko ID: 9000258160803

    Semiconductor Device Development Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Modeling and Simulation of Tunneling Current in Oxygen-Plasma-Treated Aluminum Oxide Insulating Barrier for Magnetic Tunnel Junction. (2002)
  • Hirai Tadahiko ID: 9000283159268

    Articles in CiNii:1

    • Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with a CeO2 Buffer Layer. (1994)
  • Hirai Tadahiko ID: 9000392735714

    Articles in CiNii:1

    • Preparation of Tetragonal Perovskite Single Phase PbTiO<SUB>3</SUB> Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introducing Pb and Ti Precursors (1993)
  • Hirai Tadahiko ID: 9000401635370

    Articles in CiNii:1

    • Preparation of Tetragonal Perovskite Single Phase PbTiO3Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introducing Pb and Ti Precursors (1993)
  • Hirai Tadahiko ID: 9000401642346

    Articles in CiNii:1

    • c-Axis-OrientedPb(Zr,Ti)O3Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method (1994)
  • Hirai Tadahiko ID: 9000401643385

    Articles in CiNii:1

    • Formation of Metal/Ferroelectric/Insulator/Semiconductor Structure with aCeO2Buffer Layer (1994)
  • Hirai Tadahiko ID: 9000401650145

    Articles in CiNii:1

    • Characterization of Metal/Ferroelectric/Insulator/Semiconductor Structure with $\bf CeO_{2}$ Buffer Layer (1995)
  • Hirai Tadahiko ID: 9000401651273

    Articles in CiNii:1

    • Preparation of Perovskite Oriented $\bf PbZr_{\ninmbi x}Ti_{{1}-{\ninmbi x}}O_{3}$ Films with Suppressed Vapor Phase Reactions by a Digital Chemical Vapor Deposition Method (1995)
  • Hirai Tadahiko ID: 9000401657625

    Articles in CiNii:1

    • Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor (1996)
  • Hirai Tadahiko ID: 9000401658679

    Articles in CiNii:1

    • Crystal and Electrical Characterizations of EpitaxialCeXZr1-XO2Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor (1996)
  • Hirai Tadahiko ID: 9000401661161

    Articles in CiNii:1

    • Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Structure Using SrBi$_{\bf 2}$Ta$_{\bf 2}$O$_{\bf 9}$ as the Ferroelectric Material (1996)
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