Search Results1-20 of  23

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  • Hirama Kazuyuki ID: 9000018880435

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials) （2012）
  • Hirama Kazuyuki ID: 9000019103690

    Articles in CiNii:1

    • Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by Al₂O₃ Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) （2012）
  • Hirama Kazuyuki ID: 9000025016451

    Articles in CiNii:1

    • Hexagonal AlN(0001) heteroepitaxial growth on cubic diamond(001) (Special issue: Solid state devices and materials) （2010）
  • HIRAMA Kazuyuki ID: 9000002166842

    Waseda University, School of Science and Engineering （2004 from CiNii）

    Articles in CiNii:1

    • Diamond MISFETs for High Frequency Applications （2004）
  • HIRAMA Kazuyuki ID: 9000004747160

    Articles in CiNii:10

    • p-type Surface Accumulation Layer of Hydrogen Terminated Diamond （2008）
    • 科学解説 ホール蓄積層チャネルを用いた高周波ダイヤモンドFET （2008）
    • Development of RF high-power MOSFETs based on wide-gap semiconductor diamond （2009）
  • HIRAMA Kazuyuki ID: 9000018185914

    NTT Basic Research Laboratories, NTT Corporation （2012 from CiNii）

    Articles in CiNii:2

    • High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface （2010）
    • Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al_2O_3 Overlayer and its Electric Properties （2012）
  • HIRAMA Kazuyuki ID: 9000107345117

    School of Science and Engineering, Waseda University （2005 from CiNii）

    Articles in CiNii:1

    • RF Diamond Transistors : Current Status and Future Prospects （2005）
  • HIRAMA Kazuyuki ID: 9000107386530

    School of Science and Engineering, Waseda University （2006 from CiNii）

    Articles in CiNii:1

    • Fabrication of T-Shaped Gate Diamond Metal-Insulator-Semiconductor Field-Effect Transistors （2006）
  • HIRAMA Kazuyuki ID: 9000257983532

    Faculty of Science and Engineering, Waseda University （2008 from CiNii）

    Articles in CiNii:1

    • p-type Surface Accumulation Layer of Hydrogen Terminated Diamond （2008）
  • HIRAMA Kazuyuki ID: 9000404503883

    NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation （2016 from CiNii）

    Articles in CiNii:1

    • Heteroepitaxial growth of cubic boron nitride (c-BN) thin films by ion-beam-assisted MBE （2016）
  • Hirama Kazuyuki ID: 9000025065555

    Articles in CiNii:1

    • Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices) （2012）
  • Hirama Kazuyuki ID: 9000238156563

    Articles in CiNii:4

    • Diamond/Nitride Semiconductor Heterostructure : Growth and Properties （2010）
    • 単結晶AlN/ダイヤモンドヘテロ構造成長 （2012）
    • 新機能ワイドギャップ半導体材料の開拓 (特集 新機能物質・材料創製研究の最前線) （2019）
  • Hirama Kazuyuki ID: 9000347155417

    NTT物性科学基礎研究所 （2013 from CiNii）

    Articles in CiNii:1

    • Electronic structures of NO2-adsorbed H-terminated diamond/ALD-Al2O3 inerface studied by synchrotron XPS/UPS （2013）
  • Hirama Kazuyuki ID: 9000401567969

    Articles in CiNii:1

    • 2010-03-19 （2010）
  • Hirama Kazuyuki ID: 9000401750771

    Articles in CiNii:1

    • 2006-07-07 （2006）
  • Hirama Kazuyuki ID: 9000401787085

    Articles in CiNii:1

    • Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001) （2010）
  • Hirama Kazuyuki ID: 9000401803062

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate （2012）
  • Hirama Kazuyuki ID: 9000401808285

    Articles in CiNii:1

    • Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer （2012）
  • Hirama Kazuyuki ID: 9000401980439

    Articles in CiNii:1

    • Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE （2017）
  • Hirama Kazuyuki ID: 9000402003926

    Articles in CiNii:1

    • Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate （2012）
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