Search Results1-20 of  36

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  • Hiramatsu Hidenori ID: 9000010695393

    Articles in CiNii:1

    • Properties of LaFeAsO/MgO(001) interfaces from ab initio calculations (Proceedings of the international symposium on Fe-pnictide superconductors) (2008)
  • HIRAMATSU Hidenori ID: 9000025008918

    Articles in CiNii:1

    • Thin Film Growth and Device Fabrication of Iron-Based Superconductors (Recent Developments in Superconductivity) (2012)
  • HIRAMATSU Hidenori ID: 9000000040574

    Department of Applied Chemistry, School of Engineering, Nagoya University (1997 from CiNii)

    Articles in CiNii:1

    • Thermoelectric Properties of(ZnO)_5In_2O_3 Thin Films Prepared by r. f. Sputtering Method (1997)
  • HIRAMATSU Hidenori ID: 9000258460543

    Hosono Transparent Electro Active Materials Project, ERATO, JST (2004 from CiNii)

    Articles in CiNii:1

    • High-Quality Epitaxial Film Growth of Transparent Oxide Semiconductors (2004)
  • HIRAMATSU Hidenori ID: 9000297475500

    Materials and Structures Laboratory, Tokyo Institute of Technology|Materials Research Center for Element Strategy (2015 from CiNii)

    Articles in CiNii:1

    • Effects of sulfur substitution in amorphous InGaZnO<sub>4</sub>: optical properties and first-principles calculations (2015)
  • HIRAMATSU Hidenori ID: 9000297475529

    Materials and Structures Laboratory, Tokyo Institute of Technology|Material Research Center for Element Strategy, Tokyo Institute of Technology (2015 from CiNii)

    Articles in CiNii:1

    • Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition (2015)
  • HIRAMATSU Hidenori ID: 9000322105622

    Materials and Structures Laboratory, Tokyo Institute of Technology|Materials Research Center for Element Strategy, Tokyo Institute of Technology (2016 from CiNii)

    Articles in CiNii:1

    • Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu (2016)
  • HIRAMATSU Hidenori ID: 9000376945904

    Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology|Materials Research Center for Element Strategy, Tokyo Institute of Technology (2017 from CiNii)

    Articles in CiNii:1

    • Thin-film Growth and Device Fabrication of Iron-based Superconductors (2017)
  • HIRAMATSU Hidenori ID: 9000391839105

    Hosono Transparent ElectroActive Materials, ERATO, JST, JAPAN (2003 from CiNii)

    Articles in CiNii:1

    • Single-Crystalline Film Growth of Transparent Oxide Semiconductors (2003)
  • HOSONO HIDEO ID: 9000004201519

    Frontier Research Center, Tokyo Institute of Technology (2010 from CiNii)

    Articles in CiNii:10

    • Ultraviolet Femtosecond Pulse Amplification with High Gain Using Solid-State, Broad-Band Gain Medium Ce^<3+>: LiCaAlF_6 (2001)
    • Formation and Optical Absorption Spectra of Mixed Valence State of Tl in Tl_2Nb_2O_<6+x> with Pyrochlore Structure (1996)
    • Atomic and Electronic Structures of Ni/YSZ(111) Interface (2004)
  • Hiramatsu Hidenori ID: 9000022364492

    Articles in CiNii:1

    • Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass (2007)
  • Hiramatsu Hidenori ID: 9000023711756

    Articles in CiNii:1

    • Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe (2004)
  • Hiramatsu Hidenori ID: 9000023712486

    Articles in CiNii:1

    • Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen) (2004)
  • Hiramatsu Hidenori ID: 9000023732104

    Articles in CiNii:1

    • Degenerate p-type conductivity in wide-gap LaCuOS1–xSex (x = 0–1) epitaxial films (2003)
  • Hiramatsu Hidenori ID: 9000023732216

    Articles in CiNii:1

    • Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln = La, Pr, and Nd; Ch = S or Se) semiconductor alloys (2003)
  • Hiramatsu Hidenori ID: 9000023749224

    Articles in CiNii:1

    • Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8 light-emitting diode at room temperature (2005)
  • Hiramatsu Hidenori ID: 9000023756845

    Articles in CiNii:1

    • Optoelectronic properties and electronic structure of YCuOSe (2007)
  • Hiramatsu Hidenori ID: 9000023781762

    Articles in CiNii:1

    • Wide-gap layered oxychalcogenide semiconductors: materials, electronic structures and optoelectronic properties. (2006)
  • Hiramatsu Hidenori ID: 9000326666167

    Articles in CiNii:1

    • Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis. (2016)
  • Hiramatsu Hidenori ID: 9000360556453

    Articles in CiNii:1

    • Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides (2015)
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