Search Results1-9 of  9

  • Hoshii Takuya ID: 9000024933717

    Articles in CiNii:1

    • Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • HOSHII Takuya ID: 9000016376429

    National Institute of Advanced Industrial Science and Technology (2012 from CiNii)

    Articles in CiNii:4

    • Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy (2009)
    • Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding (2009)
    • Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding (2011)
  • HOSHII Takuya ID: 9000045821659

    Articles in CiNii:13

    • Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge (2006)
    • Capacitance Analyses of p-ch GaN MOS Structure on Polarization-Junction Substrate (2017)
    • Experimental Verification of a 3D Scaling Principle for Low V[CEsat] IGBTs (2017)
  • Hoshii Takuya ID: 9000401565671

    Articles in CiNii:1

    • Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy (2008)
  • Hoshii Takuya ID: 9000401757943

    Articles in CiNii:1

    • 2007-04-24 (2007)
  • Hoshii Takuya ID: 9000401806158

    Articles in CiNii:1

    • 2012-05-21 (2012)
  • Hoshii Takuya ID: 9000402007026

    Articles in CiNii:1

    • 2012-06-01 (2012)
  • Hoshii Takuya ID: 9000402035756

    Articles in CiNii:1

    • Photoassisted impedance spectroscopy for quantum dot solar cells (2016)
  • Hoshii Takuya ID: 9000402395018

    Articles in CiNii:1

    • Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates (2019)
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