Search Results1-20 of  103

  • Hoshikawa Keigo ID: 9000019129633

    Articles in CiNii:1

    • Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application (2012)
  • HOSHIKAWA Keigo ID: 1000010231573

    Faculty of Engineering, Shinshu University (2015 from CiNii)

    Articles in CiNii:57

    • Liquid Phase Epitaxial Growth of CaMoO_4 : Nd Film Crystals (1999)
    • Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking (2001)
    • Reaction at the interface between silica crucible and Si melt : effect of Ba doping (2004)
  • HOSHIKAWA Keigo ID: 9000001328214

    Faculty of Education, Shinshu University (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Poling Field on Piezoelectric Properties of KNbO_3 Crystal Grown by Vertical Bridgman Method (2004)
  • HOSHIKAWA Keigo ID: 9000002591539

    Faculty of Education, Shinshu University (2002 from CiNii)

    Articles in CiNii:5

    • Conputer communication activities of several schools in Nagano prefecture (1995)
    • Testing and Evaluation of Teaching on Solar Cell in Electric and Electronics Field in Technology Education of High School (1998)
    • Testing and Evaluation of Teaching on Solar Cell in Electric and Electronics Field in Technology Education of Junior High School (1999)
  • HOSHIKAWA Keigo ID: 9000005533160

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1980 from CiNii)

    Articles in CiNii:1

    • Influence of Annealing during Growth on Defects in Czochralski Silicon (1980)
  • HOSHIKAWA Keigo ID: 9000005535060

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1980 from CiNii)

    Articles in CiNii:1

    • The Dissolution Rate of Silica in Molten Silicon (1980)
  • HOSHIKAWA Keigo ID: 9000020297490

    日本電信電話 (株) 厚木電気通信研究所 (1985 from CiNii)

    Articles in CiNii:1

    • Growth of single crystals in the presence of a magnetic field. (1985)
  • HOSHIKAWA Keigo ID: 9000107333209

    Faculty of Education, Shinshu University (2003 from CiNii)

    Articles in CiNii:1

    • High Strength Si Wafers with Heavy B and Ge Codoping (2003)
  • HOSHIKAWA Keigo ID: 9000107334626

    Faculty of Education, Shinshu University (2001 from CiNii)

    Articles in CiNii:1

    • Surface of Silica Glass Reacting with Silicon Melt: Effect of Raw Materials for Silica Crucibles (2001)
  • HOSHIKAWA Keigo ID: 9000107343091

    Articles in CiNii:1

    • SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System (1999)
  • HOSHIKAWA Keigo ID: 9000107344790

    Articles in CiNii:1

    • Analysis of an Oxygen Dissolution Process Concerning Czochralski (CZ) Si Crystal Growth using the Sessile Drop Method (1998)
  • HOSHIKAWA Keigo ID: 9000107347392

    Articles in CiNii:1

    • Analysis of Deposits Evaporated from Boron-Doped Silicon Melt (1997)
  • HOSHIKAWA Keigo ID: 9000107347670

    Articles in CiNii:1

    • Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed (2000)
  • HOSHIKAWA Keigo ID: 9000107379247

    Faculty of Education, Shinshu University (1998 from CiNii)

    Articles in CiNii:1

    • Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth : Effect of Ar Pressure (1998)
  • HOSHIKAWA Keigo ID: 9000107391728

    Faculty of Education, Shinshu University (2003 from CiNii)

    Articles in CiNii:1

    • Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed (2003)
  • HOSHIKAWA Keigo ID: 9000252844984

    NTT Electrical Communications Laboratories. (1986 from CiNii)

    Articles in CiNii:1

    • Some Aspects of Large-Size Crystal Growth of Semiconductors (1986)
  • HOSHIKAWA Keigo ID: 9000253321052

    日本電信電話公社武蔵野電気通信研究所 (1977 from CiNii)

    Articles in CiNii:1

    • Growth of Sapphire Ribbon Crystal by Edge-Defined, Film-Fed Growth Technique (1977)
  • HOSHIKAWA Keigo ID: 9000253322371

    Musashino Electrical Communication Laboratory, Nippon Telegraph andTelephone Public Corporation (1981 from CiNii)

    Articles in CiNii:1

    • Effects of Oxygen Impurity in Czochralski Silicon Substrates on MOS Device Performance (1981)
  • HOSHIKAWA Keigo ID: 9000253323187

    Atsugi Electrical Communication Laboratories, Nippon Telegraph and Telephone Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Round-Robin Analysis of Impurities in GaAs Crystals (2):Infrared Absorption Analysis of Carbon by Eight Organizations (1985)
  • HOSHIKAWA Keigo ID: 9000253325367

    IMR Tohoku Univ (1991 from CiNii)

    Articles in CiNii:1

    • Oxygen concentration control and magnetic field application technique in Czochralski silicon crystal growth (1991)
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