Search Results1-20 of  81

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  • HWANG Hyunsang ID: 9000001505895

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Ultrathin Nitrided-Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Gate Dielectrics Application (2001)
  • HWANG Hyunsang ID: 9000001506486

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (2001 from CiNii)

    Articles in CiNii:1

    • Effect of Plasma Nitridation on the Conduction Mechanism of Ta_2O_5 Gate Dielectric (2001)
  • HWANG Hyunsang ID: 9000001655159

    ULSI Laboratory of LG Semicon Co. Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Structural Evaluation of CVD WSix and Its Effect on Polycide Line Resistance (1995)
  • HWANG Hyunsang ID: 9000001655165

    Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Fluorine Induced Reliability Degradation of W-polycide Gate CMOS Device (1995)
  • HWANG Hyunsang ID: 9000001676305

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2006 from CiNii)

    Articles in CiNii:4

    • Improved Conductance Method for Determining Interface Trap Density of Metal-Oxide-Semiconductor Device with High Series Resistance (2005)
    • Ultrashallow Arsenic n^+/p Junction Formed by AsH_3 Plasma Doping (2006)
    • Effective Work Function of Scandium Nitride Gate Electrodes on SiO_2 and HfO_2 (2006)
  • HWANG Hyunsang ID: 9000001720367

    ULSI Laboratory, LG Semicon Co. (1996 from CiNii)

    Articles in CiNii:1

    • Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's (1996)
  • HWANG Hyunsang ID: 9000001884937

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) (2007 from CiNii)

    Articles in CiNii:1

    • Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO_2 Film (2007)
  • HWANG Hyunsang ID: 9000002168124

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2004 from CiNii)

    Articles in CiNii:1

    • Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-base gate dielectrics (2004)
  • HWANG Hyunsang ID: 9000002168841

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Improvement of Mobility on Ultra-thin Body SOI MOSFETs by Use of High Pressure Hydrogen Annealing (2005)
  • HWANG Hyunsang ID: 9000002170060

    Materials Science and Engineering, Gwangju Institute of Science and Technology (2005 from CiNii)

    Articles in CiNii:1

    • Effect of SiO_2 Underneath Layer on LaAlO_3 High Dielectric Constant Material for Gate Oxide Application (2005)
  • HWANG Hyunsang ID: 9000002171284

    Gwangju Institute of Science and Technology (2007 from CiNii)

    Articles in CiNii:2

    • Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode (2005)
    • The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET (2007)
  • HWANG Hyunsang ID: 9000002177219

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2007 from CiNii)

    Articles in CiNii:1

    • Elucidation of ReRAM Mechanism and Improvement of Memory Characteristics by HPHA (2007)
  • HWANG Hyunsang ID: 9000004965749

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2004 from CiNii)

    Articles in CiNii:15

    • Electrical and Reliability Characteristics of an Ultrathin TaO_xN_y Gate Dielectric Prepared by O_3 Annealing (2001)
    • Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO_2 as Charge-Trapping Layer and Al_2O_3 as Blocking Layer (2004)
    • Effect of Channeling of Halo Ion Implantation on Threshold Voltage Instability of MOSFET's (1995)
  • HWANG Hyunsang ID: 9000004966567

    Advanced Technology Department, ULSI Laboratory, LG Semicon Co., Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Enhanced Degradation of MOSFET's at Elevated Temperatures and Its Impact on DRAM Circuits (1995)
  • HWANG Hyunsang ID: 9000005928317

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (2000 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of Ultra-Thin Oxynitride Gate Dielectric Prepared by Reoxidation of Thermal Nitride in D_2O (2000)
  • HWANG Hyunsang ID: 9000006459332

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (2002 from CiNii)

    Articles in CiNii:1

    • Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications (2002)
  • HWANG Hyunsang ID: 9000015678024

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (2003 from CiNii)

    Articles in CiNii:1

    • Electrical Characteristics of Ozone-Oxidized HfO_2 Gate Dielectrics (2003)
  • HWANG Hyunsang ID: 9000045943251

    Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (1998 from CiNii)

    Articles in CiNii:1

    • Effect of Hydrogen Partial Pressure on the Reliability Characteristics of Ultrathin Gate Oxide (1998)
  • HWANG Hyunsang ID: 9000107327401

    Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (2006 from CiNii)

    Articles in CiNii:1

    • Electrical Properties of Atomic Layer Deposited HfO_2 Gate Dielectric Film Using D_2O as Oxidant for Improved Reliability (2006)
  • HWANG Hyunsang ID: 9000107327608

    Articles in CiNii:1

    • Electrical and Reliability Characteristics of Ultrathin Gate Oxide Prepared by Oxidation in D_2O (1999)
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