Search Results1-20 of  53

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  • IKARASHI Nobuyuki ID: 9000404507702

    Silicon Systems Research Laboratories, NEC Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Evaluation of lattice strain in device structures by using convergent-beam electron diffraction (2003)
  • Ikarashi Nobuyuki ID: 9000024979855

    Articles in CiNii:1

    • Interfacial atomic structure between Pt-added NiSi and Si(001) (Special issue: Solid state devices and materials) (2011)
  • Ikarashi Nobuyuki ID: 9000025017560

    Articles in CiNii:1

    • Nondestructive warpage measurements of LSI chips in a stacked system in package by using high-energy X-ray diffraction (Special issue: Solid state devices and materials) (2010)
  • Ikarashi Nobuyuki ID: 9000025037967

    Articles in CiNii:1

    • Electron holography characterization of ultra shallow junctions in 30-nm-gate-length metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2008)
  • IKARASHI Nobuyuki ID: 9000001133569

    Silicon Systems Research Laboratory, NEC Co. (2003 from CiNii)

    Articles in CiNii:1

    • First observation of SiO_2/Si(100) interfaces by spherical aberration-corrected high-resolution transmission electron microscopy (2003)
  • IKARASHI Nobuyuki ID: 9000001623132

    NEC (2007 from CiNii)

    Articles in CiNii:15

    • Electrical Characteristics of sub-100 nm CMOS on (110) surface Si substrate (2003)
    • Transport Properties of Sub-10-nm Planar-Bulk-CMOS Devices (2005)
    • Fabrication and Electrical Characteristics of HfSiON MOS Transistors with Ni-silicide Gate Electrode by using Phase-Controlled Full-Silicidation (PC-FUSI) Technique (2005)
  • IKARASHI Nobuyuki ID: 9000002177601

    Device Platforms Research Laboratories, NEC Corporation (2007 from CiNii)

    Articles in CiNii:1

    • Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction (2007)
  • IKARASHI Nobuyuki ID: 9000004839925

    NEC Corporation, Device Platforms Research Laboratories (2007 from CiNii)

    Articles in CiNii:8

    • Suppression of Charges in Al_2O_3 Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation (2004)
    • Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method (2005)
    • 1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs (2004)
  • IKARASHI Nobuyuki ID: 9000004963668

    Articles in CiNii:2

    • サブ0.1μm次世代LSIにおけるナノ界面制御技術による銅配線信頼性制御技術 (2003)
    • Suppression of Stress Induced Open Failures between Via and Cu Wide Line by Inserting Ti Layer under Ta/TaN Barrier (2003)
  • IKARASHI Nobuyuki ID: 9000107344099

    System Devices Research Laboratories, NEC Corporation (2005 from CiNii)

    Articles in CiNii:1

    • 1.2nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs (2005)
  • IKARASHI Nobuyuki ID: 9000107344724

    Articles in CiNii:1

    • Suppression of Surface Roughening on Strained Si/SiGe Layers by Lowering Surface Stress (1997)
  • IKARASHI Nobuyuki ID: 9000107346225

    System Devices Research Laboratories, NEC Corp. (2004 from CiNii)

    Articles in CiNii:1

    • Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure (2004)
  • IKARASHI Nobuyuki ID: 9000107388743

    Silicon Systems Research Labs., NEC Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Effects of Selecting Channel Direction in Improving Performance of Sub-100nm MOSFETs Fabricated on (110) Surface Si Substrate (2004)
  • IKARASHI Nobuyuki ID: 9000363245181

    Faculty of Bioindustry, Tokyo University of Agriculture (1998 from CiNii)

    Articles in CiNii:1

    • Comparative karyological studies and distribution of nucleolus organizer regions (NORs) in five species in cyprinoid fishes(Abstracts of the 49th Annual Meeting of the Society of Chromosome Research) : (1998)
  • Ikarashi Nobuyuki ID: 9000003377635

    Microelectronics Research Laboratories (1995 from CiNii)

    Articles in CiNii:2

    • AlAs/GaAs界面におけるステップ構造の高分解能電子顕微鏡観察 (1993)
    • 28p-N-5 High-resolution transmission electron microscopy of semiconductor hetero-interfaces (1995)
  • Ikarashi Nobuyuki ID: 9000003395283

    Silicon Systems Research Laboratories, NEC Corporation (2003 from CiNii)

    Articles in CiNii:7

    • High-resolution Transmission Electron Microscopy of Semiconductor Hetero-epitaxial Interfacial Structures (1998)
    • Evaluation of lattice strain in device structures by using convergent-beam electron diffraction (2003)
    • 半導体人工格子,量子ドット (ミニ特集 電子顕微鏡による材料研究の最前線(第2回)半導体・セラミックス機能材料の格子欠陥とミクロ構造の観察) (1998)
  • Ikarashi Nobuyuki ID: 9000058437203

    Articles in CiNii:1

    • Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2Gate Stacks (2006)
  • Ikarashi Nobuyuki ID: 9000252761013

    Physics Department, Tokyo Institute of Technology (1988 from CiNii)

    Articles in CiNii:1

    • Epitaxy of Au and Ag on Cleaved (10, 0) Surface of MoS<SUB>2</SUB> (1988)
  • Ikarashi Nobuyuki ID: 9000252763760

    Microelectronics Research Laboratories, NEC Corporation (1991 from CiNii)

    Articles in CiNii:1

    • Photoluminescence of Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I>/Si Quantum Well Structures (1991)
  • Ikarashi Nobuyuki ID: 9000252959191

    Physics Department, Tokyo Institute of Technology (1986 from CiNii)

    Articles in CiNii:1

    • Atomic Resolution TEM Images of the Au(001) Reconstructed Surface (1986)
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