Search Results21-40 of  192

  • Imura Takeshi ID: 9000252758839

    Department of Electrical Engineering, Hiroshima University (1985 from CiNii)

    Articles in CiNii:1

    • Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique (1985)
  • Imura Takeshi ID: 9000252759061

    Articles in CiNii:1

    • Chalcogenide Amorphous Semiconductor Diodes (1985)
  • Imura Takeshi ID: 9000252760446

    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University (1988 from CiNii)

    Articles in CiNii:1

    • Effect of Hydrogen Dilution on Structure of a-Si:H Prepared by Substrate Impedance Tuning Technique (1988)
  • Imura Takeshi ID: 9000252761367

    Department of Electrical Engineering, Hiroshima University (1989 from CiNii)

    Articles in CiNii:1

    • Local Structures and Annealing Behavior of Amorphous Te<I><SUB>x</SUB></I>C<SUB>1−<I>x</I></SUB> Alloys Prepared by rf Sputtering (1989)
  • Imura Takeshi ID: 9000252762296

    Department of Electrical Engineering, Hiroshima University (1990 from CiNii)

    Articles in CiNii:1

    • Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling (1990)
  • Imura Takeshi ID: 9000252797117

    Denki-Bussei Laboratory, Department of Electrical Engineering, Faculty of Engineering, Osaka University (1972 from CiNii)

    Articles in CiNii:1

    • NEGATIVE PHOTOCONDUCTION IN SOLUTION DUE TO PHOTOEJECTION OF ELECTRON FROM <I>p</I>-BENZOQUINONE ANION TO TETRAMETHYL-<I>p</I>-PHENYLENEDIAMINE CATION (1972)
  • Imura Takeshi ID: 9000252802989

    Department of Electrical Engineering, Faculty of Engineering, Hiroshima University (1987 from CiNii)

    Articles in CiNii:1

    • Superconducting Y-Ba-Cu-O films with Tc>70K prepared by thermal decomposition technique of Y-, Ba-, and Cu-2ethylhexanoates. (1987)
  • Imura Takeshi ID: 9000252946724

    Department of Electrical Engineering, Osaka University (1979 from CiNii)

    Articles in CiNii:1

    • Si(LMM) auger electron emission from Si alloys by keV Ar+ ion bombardment, new effect and application. (1979)
  • Imura Takeshi ID: 9000252947421

    Department of Electrical Engineering, Faculty of Engineering, Osaka University (1980 from CiNii)

    Articles in CiNii:1

    • Spontaneous inclusion of oxygen in sputter-deposited amorphous silicon during and after fabrication. (1980)
  • Imura Takeshi ID: 9000252948563

    Department of Electrical Engineering, Osaka University (1980 from CiNii)

    Articles in CiNii:1

    • Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar<SUP>+</SUP> Ion Bombardment (1980)
  • Imura Takeshi ID: 9000252949842

    Osaka University (1981 from CiNii)

    Articles in CiNii:1

    • Boron Doping of Hydrogenated Silicon Thin Films (1981)
  • Imura Takeshi ID: 9000252949926

    Faculty of Engineering, Osaka University (1981 from CiNii)

    Articles in CiNii:1

    • Auger and X-Ray Analyses of Iron-Oxide-Coated Si Photoelectrodes (1981)
  • Imura Takeshi ID: 9000252952305

    Department of Electrical Engineering, Osaka University (1982 from CiNii)

    Articles in CiNii:1

    • Sensitive Detection of Hydrogen in a-Si: H by Coincidence Measurement of Elastically Scattered 100 MeV <SUP>3</SUP>He<SUP>2+</SUP> Ions and Recoil Protons (1982)
  • Imura Takeshi ID: 9000252953419

    Department of Electrical Engineering, Faculty of Engineering, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Evaluation of Fermi-Level in Doped Films of a-SiC:H by X-Ray Photoemission Spectroscopy (1983)
  • Imura Takeshi ID: 9000252953849

    Department of Electrical Engineering, Faculty of Engineering, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Growth of Hydrogenated Germanium Microcrystal by Reactive Sputtering (1983)
  • Imura Takeshi ID: 9000252953936

    Department of Electrical Engineering, Osaka University (1983 from CiNii)

    Articles in CiNii:1

    • Fabrication of Si:H Alloy with Plenty of –SiH<SUB>3</SUB> by Reactive Sputtering onto Low Temperature Substrate (1983)
  • Imura Takeshi ID: 9000252954270

    Department of Electrical Engineering, Hiroshima University (1984 from CiNii)

    Articles in CiNii:1

    • Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon (1984)
  • Imura Takeshi ID: 9000252954337

    Faculty of Engineering, Osaka University (1984 from CiNii)

    Articles in CiNii:1

    • Structure Change of Microcrystalline Silicon Films in Deposition Process (1984)
  • Imura Takeshi ID: 9000252955515

    Faculty of Engineering, Hiroshima University (1984 from CiNii)

    Articles in CiNii:1

    • Diffusion Profile of Some Metal Ions in Chalcogenide Amorphous Semiconductors (1984)
  • Imura Takeshi ID: 9000252955552

    Faculty of Engineering, Hiroshima University (1984 from CiNii)

    Articles in CiNii:1

    • Evaluation of Boron and Phosphorus Doping Microcrystalline Silicon Films (1984)
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