Search Results1-15 of  15

  • INANAMI Ryoichi ID: 9000000165037

    Nagoya University (1996 from CiNii)

    Articles in CiNii:1

    • Electron-Beam Assisted Inductively Coupled Plasma for Quarter-Micron Etching Processes (1996)
  • INANAMI Ryoichi ID: 9000000225828

    Nagoya University, CCRAST (1996 from CiNii)

    Articles in CiNii:1

    • Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF_4 Plasma (1996)
  • INANAMI Ryoichi ID: 9000001667805

    イービーム (2006 from CiNii)

    Articles in CiNii:4

    • A cell library development methodology for character projection (2006)
    • A cell library development methodology for character projection (2005)
    • A cell library development methodology for character projection (2005)
  • INANAMI Ryoichi ID: 9000005716938

    Process & Manufacturing Engineering Center Semiconductor Company, Toshiba Corp. (2002 from CiNii)

    Articles in CiNii:3

    • 50nm Pattern Etching of Si Wafer by Synchrotron Radiation Exited CF_4 Plasma (1997)
    • Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match (1999)
    • Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation (2002)
  • INANAMI Ryoichi ID: 9000006072290

    e-BEAM Corporation (2006 from CiNii)

    Articles in CiNii:1

    • Cell Library Development Methodology for Throughput Enhancement of Character Projection Equipment (2006)
  • Inanami Ryoichi ID: 9000253028204

    Department of Electrical and Electronic Engineering and Information Engineering, Nagoya University (1997 from CiNii)

    Articles in CiNii:1

    • Sub-100 nm Lithography with Using Pulsed Plasma Graft-polymerized Styrene and E-Beam Excited Plasma. (1997)
  • Inanami Ryoichi ID: 9000258131087

    Nagoya University, CCRAST, Nagoya 464–01, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in CF4 Plasma. (1996)
  • Inanami Ryoichi ID: 9000258134768

    Department of Electrical and Electronic Engineering and Information Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya 464–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • 50 mn Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF4 Plasma. (1997)
  • Inanami Ryoichi ID: 9000258162584

    Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2002 from CiNii)

    Articles in CiNii:1

    • Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation. (2002)
  • Inanami Ryoichi ID: 9000391529885

    Nagoya University (1996 from CiNii)

    Articles in CiNii:1

    • Electron-Beam Assisted Inductively Coupled Plasma for Quarter-Micron Etching Processes (1996)
  • Inanami Ryoichi ID: 9000391545550

    Center for Cooperative Research in Advanced Science & Technology, Nagoya university (1993 from CiNii)

    Articles in CiNii:1

    • Fabrication of Electron-Beam Excited Plasma Process Reactor with a Polymer Interface (1993)
  • Inanami Ryoichi ID: 9000401660075

    Articles in CiNii:1

    • Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si inCF4Plasma (1996)
  • Inanami Ryoichi ID: 9000401668177

    Articles in CiNii:1

    • 50 nm Pattern Etching of Si Wafer by Synchrotron Radiation Excited CF4Plasma (1997)
  • Inanami Ryoichi ID: 9000401684539

    Articles in CiNii:1

    • Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match (1999)
  • Inanami Ryoichi ID: 9000401707887

    Articles in CiNii:1

    • Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation (2002)
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