Search Results1-20 of  30

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  • Ng Geok Ing ID: 9000241877163

    Articles in CiNii:1

    • Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (2013)
  • ING Ng Geok ID: 9000107342001

    School of Electrical and Electronic Engineering, Nanyang Technological University (2009 from CiNii)

    Articles in CiNii:1

    • Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111) (2009)
  • ING Ng Geok ID: 9000107355374

    School of EEE, Division of Microelectronics, Nanyang Technological University (2011 from CiNii)

    Articles in CiNii:1

    • Improved Power Device Figure-of-Merit (4.0 x 10^8V^2Ω^<-1>cm^<-2>) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si (2011)
  • ING Ng Geok ID: 9000107365141

    NOVITAS-Centre of Excellence for Nanoelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University (2012 from CiNii)

    Articles in CiNii:1

    • Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy (2012)
  • Ing Ng Geok ID: 9000401565948

    Articles in CiNii:1

    • 2009-02-27 (2009)
  • Ing Ng Geok ID: 9000401571092

    Articles in CiNii:1

    • Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si (2011)
  • Ing Ng Geok ID: 9000401573770

    Articles in CiNii:1

    • Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy (2012)
  • NG Geok Ing ID: 9000005744068

    Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological University (2002 from CiNii)

    Articles in CiNii:3

    • Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell:Optimization of Electrical, Optical and Surface Morphology Characteristics (1999)
    • Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation (2002)
    • DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature (2002)
  • NG Geok Ing ID: 9000018820160

    School of Electrical and Electronic Engineering, Nanyang Technological University (2011 from CiNii)

    Articles in CiNii:1

    • Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al_2O_3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si (2011)
  • NG Geok Ing ID: 9000240538693

    NOVITAS-Nanoelectronics Centre of Excellance, Nanyang Technological Univ. (2012 from CiNii)

    Articles in CiNii:1

    • High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application (2012)
  • NG Geok Ing ID: 9000248242125

    School of Electrical and Electronics Engineering, Nanyang Technological University (2013 from CiNii)

    Articles in CiNii:1

    • Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal-Oxide-Semiconductor-Compatible Non-Gold Metal Stack (2013)
  • Ng Geok Ing ID: 9000024934787

    Articles in CiNii:1

    • Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate (2012)
  • Ng Geok Ing ID: 9000258145821

    School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore (1999 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell: Optimization of Electrical, Optical and Surface Morphology Characteristics. (1999)
  • Ng Geok Ing ID: 9000401571485

    Articles in CiNii:1

    • 2011-09-20 (2011)
  • Ng Geok Ing ID: 9000401685040

    Articles in CiNii:1

    • Molecular Beam Epitaxial Growth of InP Using a Valved Phosphorus Cracker Cell: Optimization of Electrical, Optical and Surface Morphology Characteristics (1999)
  • Ng Geok Ing ID: 9000401704581

    Articles in CiNii:1

    • Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation (2002)
  • Ng Geok Ing ID: 9000401704697

    Articles in CiNii:1

    • DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature (2002)
  • Ng Geok Ing ID: 9000401984460

    Articles in CiNii:1

    • 2013-01-01 (2013)
  • Ng Geok Ing ID: 9000401986910

    Articles in CiNii:1

    • Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (2013)
  • Ng Geok Ing ID: 9000401987968

    Articles in CiNii:1

    • 2014-03-18 (2014)
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