Search Results1-20 of  116

  • Inoue Naohisa ID: 9000025096127

    Articles in CiNii:1

    • Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2μm Wavelength Region Grown on InP Substrates (Special Issue: Solid State Devices & Materials) (2006)
  • Inoue Naohisa ID: 9000398780662

    Articles in CiNii:1

    • Impedance modeling of elastic boundary support in the vibration field of a thin plate (2018)
  • INOUE Naohisa ID: 9000001036507

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (2003 from CiNii)

    Articles in CiNii:1

    • Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal (2003)
  • INOUE Naohisa ID: 9000003274611

    Institute for Solid State Physics,University of Tokyo (1980 from CiNii)

    Articles in CiNii:5

    • X-ray topographic investigation on phase transition in quartz-1-Experimental observations (1974)
    • Effect of Transition Metal Solutes on Magnetic Properties of Pt (1978)
    • Microscopic Origin of the Metamagnetic Transition in Co (S_xSe_<1-x>)_2-^<59>Co NMR (1979)
  • INOUE Naohisa ID: 9000005539317

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, (1978 from CiNii)

    Articles in CiNii:1

    • Inhomogeneous Oxygen Precipitation and Stacking Fault Formation in Czochralski Silicon (1978)
  • INOUE Naohisa ID: 9000005653419

    NTT LSI Laboratories (1994 from CiNii)

    Articles in CiNii:1

    • Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy (1994)
  • INOUE Naohisa ID: 9000005659039

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Interface Structures in AlGaAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (MOCVD) (1995)
  • INOUE Naohisa ID: 9000005732750

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1979 from CiNii)

    Articles in CiNii:1

    • Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski Silicon (1979)
  • INOUE Naohisa ID: 9000005744296

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (1999 from CiNii)

    Articles in CiNii:1

    • Properties of In_<0.52>Al_<0.48>As and In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As Quantum Well Structures Grown on (111)B InP Substrates by Molecular Beam Epitaxy (1999)
  • INOUE Naohisa ID: 9000005752095

    Musashino Electrical Communication Laboratory, Nippon Tel (1979 from CiNii)

    Articles in CiNii:1

    • Stacking Faults from Oxide Precipitates in CZ Silicon : B-3: CRYSTAL GROWTH AND DEFECTS (1979)
  • INOUE Naohisa ID: 9000005899925

    Department of Electrical and Electronic Engineering, National Defense Academy (2005 from CiNii)

    Articles in CiNii:14

    • 2.43μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates (2004)
    • Growth of Periodic SiO_2 Nanostructures Using a 157nm F_2 Laser (2005)
    • MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates (2005)
  • INOUE Naohisa ID: 9000017582967

    JGC Corporation (2010 from CiNii)

    Articles in CiNii:1

    • 3P-2071 Development of highly efficient enzymatic hydrolysis technology under static condition (2010)
  • INOUE Naohisa ID: 9000020081709

    電々公社武蔵野通研 (1979 from CiNii)

    Articles in CiNii:1

    • Microdefects in Czochralski Silicon (1979)
  • INOUE Naohisa ID: 9000020288385

    日本電信電話 (株) LSI研究所 (1991 from CiNii)

    Articles in CiNii:1

    • GaAs Monolayer Growth Control by Molecular Beam Epitaxy. (1991)
  • INOUE Naohisa ID: 9000020321975

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (2000 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (2000)
  • INOUE Naohisa ID: 9000021279024

    NTT LSI Lab. (1994 from CiNii)

    Articles in CiNii:1

    • Semiconductor Ultrathin Films and Quantum Wells. (1994)
  • INOUE Naohisa ID: 9000021531101

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (1999 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1999)
  • INOUE Naohisa ID: 9000021531110

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (1999 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1999)
  • INOUE Naohisa ID: 9000107347522

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (2004 from CiNii)

    Articles in CiNii:1

    • Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method (2004)
  • INOUE Naohisa ID: 9000107356012

    Research Institute for Advanced Science and Technology, Osaka Prefecture University (1997 from CiNii)

    Articles in CiNii:1

    • Nitrogen Plasma Doping during Metalorganic Chemical Vapor Deposition of ZnSe (1997)
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