Search Results1-20 of  43

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  • INUISHI Masahide ID: 9000001496373

    Renesas Technology Corporation, Wafer Process Engineering Development Department (2005 from CiNii)

    Articles in CiNii:1

    • Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond (2005)
  • INUISHI Masahide ID: 9000002164754

    ULSI development center, MITSUBISHI electric corporation (1999 from CiNii)

    Articles in CiNii:1

    • Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics (1999)
  • INUISHI Masahide ID: 9000004823334

    Advanced Device Development Dept., Renesas Technology Corp. (2004 from CiNii)

    Articles in CiNii:14

    • Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region (1996)
    • Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers (1997)
    • A 90nm-node SOI Technology for RF Applications (2004)
  • INUISHI Masahide ID: 9000004954563

    Renesas Technology Corporation (2006 from CiNii)

    Articles in CiNii:26

    • Nitrogen ion implantation for highly reliable and high-performance MOSFETs (1997)
    • Impact of Actively Body-bias Controlled (ABC) SOI SRAM for Low-Voltage and High-Speed Operation (2004)
    • Bulk-Layout-Compatible 0.18μm SOI-CMOS Technology using Body-Tied Partial Trench Isolation (PTI) (1999)
  • INUISHI Masahide ID: 9000107308442

    Articles in CiNii:1

    • Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories (2000)
  • INUISHI Masahide ID: 9000107343857

    Process Technology Development Division, Renesas Technology Corp. (2005 from CiNii)

    Articles in CiNii:1

    • Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond (2005)
  • INUISHI Masahide ID: 9000107382863

    ULSI Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency (1996)
  • INUISHI Masahide ID: 9000107383012

    ULSI Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Clarification of Nitridation Effect on Oxide Formation Methods (1996)
  • INUISHI Masahide ID: 9000107383414

    ULSI Laboratory, Mitsubishi Electric Corporation (1996 from CiNii)

    Articles in CiNii:1

    • Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure (1996)
  • INUISHI Masahide ID: 9000107388597

    Advanced Device Development Department, Renesas Technology Corporation (2004 from CiNii)

    Articles in CiNii:1

    • W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory (2004)
  • Inuishi Masahide ID: 9000252985514

    LSI Laboratory, Mitsubishi Electric Corporation (1993 from CiNii)

    Articles in CiNii:1

    • Proximity Gettering of Heavy Metals by High-Energy Ion Implantation (1993)
  • Inuishi Masahide ID: 9000258125659

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly Reliable and High-Performance Sub-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor. (1995)
  • Inuishi Masahide ID: 9000258126225

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1995 from CiNii)

    Articles in CiNii:1

    • New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation. (1995)
  • Inuishi Masahide ID: 9000258131320

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure. (1996)
  • Inuishi Masahide ID: 9000258131325

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency. (1996)
  • Inuishi Masahide ID: 9000258131684

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC) MOSFETs for Sub-Quarter-Micron Region. (1996)
  • Inuishi Masahide ID: 9000258131866

    ULSI Laboratory, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664, Japan (1996 from CiNii)

    Articles in CiNii:1

    • Clarification of Nitridation Effect on Oxide Formation Methods. (1996)
  • Inuishi Masahide ID: 9000258139008

    ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664–8641, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm. (1998)
  • Inuishi Masahide ID: 9000258139595

    ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664–8641, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Scalability of Gate/N- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime. (1998)
  • Inuishi Masahide ID: 9000258151535

    ULSI Development Center, Mitsubishi Electric Corporation, 4–1 Mizuhara, Itami, Hyogo 664-8641, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories. (2000)
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