Search Results1-20 of  21

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  • Inushima Takashi ID: 9000024954262

    Articles in CiNii:1

    • Inverted Hexagonal-Pyramid Growth of InN by Electric-Field Enhanced Metal Organic Chemical Vapor Deposition (2013)
  • INUSHIMA Takashi ID: 9000001519465

    Faculty of Engineering, Tokai University (1995 from CiNii)

    Articles in CiNii:2

    • U. V. -irradiated effect of InN thin film by ALE growth (1995)
    • Optical properties of InN thin film (1995)
  • INUSHIMA Takashi ID: 9000002253201

    Department of Communications Engineering (2001 from CiNii)

    Articles in CiNii:1

    • Crystal Morphology and Electrical Properties of AlN Grown on 6H-SiC (2001)
  • INUSHIMA Takashi ID: 9000002253205

    Department of Communications Engineering (2001 from CiNii)

    Articles in CiNii:1

    • Fabrication of AlN/Al_2O_3 GHz Band SAW Filter and Simulation Analysis (2001)
  • INUSHIMA Takashi ID: 9000002253440

    Department of Electronics, Tokai University (2002 from CiNii)

    Articles in CiNii:1

    • <Abstract>Fabrication of Al_<1-x>In_xN films at the Resonance point of Nitrogen-ECR plasma (2002)
  • INUSHIMA Takashi ID: 9000002253445

    Department of Electronics, Tokai University (2002 from CiNii)

    Articles in CiNii:1

    • <Abstract>Epitaxial Growth of GaN on Si(111) Substrate using AlN Intermediate Layer (2002)
  • INUSHIMA Takashi ID: 9000003290785

    Faculty of Engineering., Tokai University (1995 from CiNii)

    Articles in CiNii:2

    • Electrical Properties of Sb Doped Diamond Films (1995)
    • Electrical transport mechanism of Metal/Diamond/Si diode II (1995)
  • INUSHIMA Takashi ID: 9000005993440

    Department of Electronics (2004 from CiNii)

    Articles in CiNii:1

    • In-situ Monitoring of AlN Crystal Growth on 6H-SiC by the use of Pyrometer(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-) (2004)
  • Inushima Takashi ID: 1000020266381

    Articles in CiNii:9

    • InNをベースとするナイトライド化合物半導体の低温高磁場電気伝導の研究 (強磁場下の物性の研究--その他) (2003)
    • InNをベースとするナイトライド化合物半導体の低温高磁場電気伝導の研究 (強磁場下の物性の研究--その他) (2004)
    • 磁気抵抗測定による窒化インジウム系化合物半導体の電子構造の解明 (強磁場下の物性の研究--その他) (2005)
  • Inushima Takashi ID: 9000005993434

    Department of Electronics (2004 from CiNii)

    Articles in CiNii:1

    • Co-existence of semiconducting and superconducting properties of InN(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF INFORMATION TECHNOLOGY AND ELECTRONICS SERIES J TOKAI UNIVERSITY -2003-2004-) (2004)
  • Inushima Takashi ID: 9000019330152

    Graduate School of Science and Technology, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan (2013 from CiNii)

    Articles in CiNii:1

    • Inverted Hexagonal-Pyramid Growth of InN by Electric-Field Enhanced Metal Organic Chemical Vapor Deposition (2013)
  • Inushima Takashi ID: 9000019371663

    Articles in CiNii:1

    • Superconducting Properties of InN with Low Carrier Density near the Mott Transition (2012)
  • Inushima Takashi ID: 9000019417305

    Articles in CiNii:1

    • Observation of a Phase Transition in SbSBr Single Crystals Grown by Vapor Transport Method (1980)
  • Inushima Takashi ID: 9000019453149

    Articles in CiNii:1

    • Birefringence and Phase Transitions in SbSI (1978)
  • Inushima Takashi ID: 9000254131416

    Institute of Physics, The University of Tsukuba (1980 from CiNii)

    Articles in CiNii:1

    • Observation of a Phase Transition in SbSBr Single Crystals Grown by Vapor Transport Method (1980)
  • Inushima Takashi ID: 9000254553315

    Institute of Physics, University of Tsukuba (1978 from CiNii)

    Articles in CiNii:1

    • Birefringence and Phase Transitions in SbSI (1978)
  • Inushima Takashi ID: 9000292204523

    Articles in CiNii:1

    • Evolution of the Impurity Band to Diamond-Like Valence Bands in Boron Doped Diamond (2014)
  • Inushima Takashi ID: 9000401840287

    Institute of Physics, University of Tsukuba (1978 from CiNii)

    Articles in CiNii:1

    • Birefringence and Phase Transitions in SbSI (1978)
  • Inushima Takashi ID: 9000401843967

    Institute of Physics, The University of Tsukuba (1980 from CiNii)

    Articles in CiNii:1

    • Observation of a Phase Transition in SbSBr Single Crystals Grown by Vapor Transport Method (1980)
  • Inushima Takashi ID: 9000401911440

    Department of Electronics, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan (2012 from CiNii)

    Articles in CiNii:1

    • Superconducting Properties of InN with Low Carrier Density near the Mott Transition (2012)
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