Search Results1-20 of  23

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  • ISHIBASHI Akihiko ID: 9000004782152

    Matsushita Electric (Panasonic) (2004 from CiNii)

    Articles in CiNii:5

    • Improvement of Optical Gain in InGaN-based MQW for High Power Laser Operation (2004)
    • Study on Stress Distributions in Air-Bridged Lateral Epitaxial Grown GaN with Low Dislocation Density (2002)
    • Study on Stress Distributions in Air-Bridged Lateral Epitaxial Grown GaN with Low Dislocation Density (2002)
  • ISHIBASHI Akihiko ID: 9000005719367

    Advanced Technology Research Laboratories, Matsushita Electric Ind.Co., Ltd. (2000 from CiNii)

    Articles in CiNii:4

    • MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate (1996)
    • Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate (1997)
    • Complex Flow and Gas-Phase Reactions in a Horizontal Reactor for GaN Metalorganic Vapor Phase Epitaxy (2000)
  • ISHIBASHI Akihiko ID: 9000107391731

    Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Study on Deformations and Stress Distributions in Air-Bridged Lateral-Epitaxial-Grown GaN Films (2003)
  • ISHIBASHI Akihiko ID: 9000255851091

    The 2nd Tokyo National Hospital (1985 from CiNii)

    Articles in CiNii:1

    • Statistical analysis of the Joint Use System of the Nuclear Medicine Center during the past 5 years. (1985)
  • ISHIBASHI Akihiko ID: 9000255861979

    Dept. of Electronic Eng., Fac. of Eng., Tokyo Denki Univ. (1988 from CiNii)

    Articles in CiNii:1

    • Chaos in brain and neurons and an analysis on the fractal dimensions. (1988)
  • ISHIBASHI Akihiko ID: 9000256508124

    The 2nd Tokyo National Hospital (1980 from CiNii)

    Articles in CiNii:1

    • THE VALUE OF DIAGNOSTIC AIDS IN DETECTING PANCREAS CANCER—ITS EARLY RADIOISOTOPIC RECOGNITION— (1980)
  • ISHIBASHI Akihiko ID: 9000256509177

    The 2nd Tokyo National Hospital (1982 from CiNii)

    Articles in CiNii:1

    • Fundamental Evaluation of 4 Channel Radio-immunoassay Counting System (1982)
  • ISHIBASHI Akihiko ID: 9000256509242

    The 2nd Tokyo National Hospital (1982 from CiNii)

    Articles in CiNii:1

    • Fundamental Evaluation on the Determination of Serum Ferritin Levels in the Healthy Person (1982)
  • ISHIBASHI Akihiko ID: 9000256512318

    The 2nd Tokyo National Hospital (1986 from CiNii)

    Articles in CiNii:1

    • Basic and clinical studies on SCC(squamous cell carcinoma related antigen) kit. (1986)
  • ISHIBASHI Akihiko ID: 9000256521304

    National Hospital Tokyo Medical Center (1999 from CiNii)

    Articles in CiNii:1

    • Antigen Ratio for Screening of Prostate Cancer. (1999)
  • ISHIBASHI Akihiko ID: 9000392643306

    Articles in CiNii:1

    • Synthesis and Antifungal Activity of Butenafine Hydrochloride (KP-363), a New Benzylamine Antifungal Agent (1991)
  • Ishibashi Akihiko ID: 9000005073714

    国立大蔵病院 放射線科(現)国立東京第二病院 放射線科 (1996 from CiNii)

    Articles in CiNii:13

    • 344 Evaluation of Laser imager (FL-IMD) with microphotometer (1995)
    • Image evaluation of laser imager : FL-IMD (1995)
    • Evaluation InSight system in Upper gastrointestinal tract (1996)
  • Ishibashi Akihiko ID: 9000025103636

    Articles in CiNii:1

    • Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy (2012)
  • Ishibashi Akihiko ID: 9000254140427

    Articles in CiNii:1

    • Evolution of Excitonic States and Localized Exciton Luminescence in Pb<SUB>1−<I>x</I></SUB>Cd<I><SUB>x</SUB></I>I<SUB>2</SUB> Solid Solutions (1993)
  • Ishibashi Akihiko ID: 9000258136061

    Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 3–1–1 Yagumo–Nakamachi, Moriguchi, Osaka 570, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate. (1997)
  • Ishibashi Akihiko ID: 9000258163885

    Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd. (2003 from CiNii)

    Articles in CiNii:1

    • Study on Deformations and Stress Distributions in Air-Bridged Lateral-Epitaxial-Grown GaN Films (2003)
  • Ishibashi Akihiko ID: 9000401663141

    Articles in CiNii:1

    • Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate (1997)
  • Ishibashi Akihiko ID: 9000401692319

    Articles in CiNii:1

    • Complex Flow and Gas-Phase Reactions in a Horizontal Reactor for GaN Metalorganic Vapor Phase Epitaxy (2000)
  • Ishibashi Akihiko ID: 9000401694642

    Articles in CiNii:1

    • Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth (2000)
  • Ishibashi Akihiko ID: 9000401721846

    Articles in CiNii:1

    • Study on Deformations and Stress Distributions in Air-Bridged Lateral-Epitaxial-Grown GaN Films (2003)
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