Search Results1-10 of  10

  • ISHIGURO Osamu ID: 9000001778796

    Toyota Central R&D Labs., Inc. (2006 from CiNii)

    Articles in CiNii:2

    • Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode (2006)
    • Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire (2006)
  • ISHIGURO Osamu ID: 9000001884814

    Toyota Central R&D Laboratories, Inc. (2008 from CiNii)

    Articles in CiNii:2

    • Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method (2007)
    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • ISHIGURO Osamu ID: 9000006419636

    TOYOTA Central R&D Labs., Inc. (2007 from CiNii)

    Articles in CiNii:15

    • A Vertical Operation of Insulated Gate AlGaN/GaN-HFETs (2006)
    • Development of a Vertical GaN Power Device (2007)
    • Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier measurements (2007)
  • ISHIGURO Osamu ID: 9000021761788

    Research Institute of Meiji Sugar Manufacturing Co., Ltd. (1971 from CiNii)

    Articles in CiNii:6

    • Studies on the storage of fruits and vegetables:V. On the CA-storage of Satsuma orange used for semi-practical CA plant (1971)
    • Studies on the storage of fruits and vegetables:IV. Design and installation of the pilot plant of a new CA storage method (1970)
    • Studies on the storage of fruits and vegetables:III. A laboratory method for maintaining both O<sub>2</sub> and CO<sub>2</sub> concentrations in controlled-atmosphere chamber (1970)
  • ISHIGURO Osamu ID: 9000254265464

    北海道大学大学院 (1980 from CiNii)

    Articles in CiNii:1

    • Organized Motion near the Wall in Adverse Pressure Gradient Turbulent Boundary Layer (1980)
  • Ishiguro Osamu ID: 9000238294400

    Articles in CiNii:1

    • Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer (2008)
  • Ishiguro Osamu ID: 9000401564056

    Articles in CiNii:1

    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching (2008)
  • Ishiguro Osamu ID: 9000401755697

    Articles in CiNii:1

    • Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire (2006)
  • Ishiguro Osamu ID: 9000401756001

    Articles in CiNii:1

    • Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode (2006)
  • Ishiguro Osamu ID: 9000401765753

    Articles in CiNii:1

    • A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor (2007)
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