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  • ISHIKAWA Masaoki ID: 9000004765211

    NEC Corporation Optoelectronics and High Frequency Device Research Laboratory (1999 from CiNii)

    Articles in CiNii:18

    • A 0.1μm Double-Deck-Shaped (DDS) Gate GaAs-HJFET (1998)
    • An Ultra-low Power-consumption High-speed GaAs 256/258 Dual-modulus Prescaler IC (1998)
    • A 28GHz/120mW GaAs 256/258 Dual-Modulus Prescaler IC with 0.1-μm Double-Deck-Shaped (DDS) Gate E/D-HJFETs (1999)
  • ISHIKAWA Masaoki ID: 9000004813296

    Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation (1999 from CiNii)

    Articles in CiNii:2

    • A 1.3V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps (1996)
    • 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs (1999)
  • ISHIKAWA Masaoki ID: 9000004955697

    School of Information Science, Japan Advanced Institute of Science and Technology (1997 from CiNii)

    Articles in CiNii:1

    • Cryptanalysis of Discrete Logarithm Cryptosystems Using Timing Attacks (1997)
  • Ishikawa Masaoki ID: 9000002454375

    School of Law,Waseda University (1988 from CiNii)

    Articles in CiNii:3

    • <Material> Strafrechtsdogmatik und Strafvollzugswissenschaft : Beruhrungspunkte,Gemeinsamkeiten und Unterschiede (1979)
    • <Articles> The Future of Rehabilitation within the Walls : in the case of the U.S.A. and Japan (1979)
    • <Lecture> Frauenkriminalitat und Frauenstrafvollzug (1988)
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