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  • ISHIO Kouji ID: 9000005904479

    Deptarment of Electrical and Electronic Engineering, Toyohashi University of Technology (2000 from CiNii)

    Articles in CiNii:2

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale (1999)
    • Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale (2000)
  • Ishio Kouji ID: 9000258152002

    Deptartment of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi 441-8580, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale. (2000)
  • Ishio Kouji ID: 9000401688648

    Articles in CiNii:1

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO3Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale (2000)
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