Search Results1-20 of  25

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  • ISHITANI Yoshihiro ID: 9000001854496

    Department of Electronics and Mechanical Engineering, Chiba University （2006 from CiNii）

    Articles in CiNii:2

    • Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy （2006）
    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth （2006）
  • ISHITANI Yoshihiro ID: 9000004785358

    Chiba Uhiv. （2013 from CiNii）

    Articles in CiNii:28

    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry （2004）
    • Observation of InN dots on N-polar GaN grown by RF-MBE : Investigation of growth mechanism of N-polar InN dots growth （2004）
    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry （2004）
  • ISHITANI Yoshihiro ID: 9000005582900

    Center for Frontier Electronics and Photonics, Chiba University:Department of Electronics and Mechanical Engineering, Chiba University （2002 from CiNii）

    Articles in CiNii:3

    • Temperature Dependence of Excitonic Γ_c-Γ_v Transition Energies of Ga_xIn_<1-x>P Crystals （2001）
    • The Γ_c-Γ_v Transition Energies of Al_xIn_<1-x>P Alloys （1997）
    • Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film （2002）
  • ISHITANI Yoshihiro ID: 9000015563571

    Department of Electronics and Mechanical Engineering, Chiba University （2003 from CiNii）

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface （2003）
  • ISHITANI Yoshihiro ID: 9000107341939

    Graduate School of Electrical and Electronic Engineering and Venture Business Laboratory, Chiba University （2009 from CiNii）

    Articles in CiNii:1

    • Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region （2009）
  • ISHITANI Yoshihiro ID: 9000107363577

    Department of Electronics and Mechanical Engineering, Chiba University （2004 from CiNii）

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy （2004）
  • ISHITANI Yoshihiro ID: 9000107390437

    Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University （2006 from CiNii）

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy （2006）
  • Ishitani Yoshihiro ID: 9000258134081

    Central Research Laboratory, Hitachi Ltd. 1–280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan （1997 from CiNii）

    Articles in CiNii:1

    • The .GAMMA.c-.GAMMA.v Transition Energies of AlxIn1-xP Alloys. （1997）
  • Ishitani Yoshihiro ID: 9000258155488

    Department of Engineering I, Hiroshima University, 1-4-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan （2001 from CiNii）

    Articles in CiNii:1

    • Temperature Dependence of Excitonic .GAMMA.c-.GAMMA.v Transition Energies of GaxIn1-xP Crystals. （2001）
  • Ishitani Yoshihiro ID: 9000258173415

    Department of Electronics and Mechanical Engineering, Chiba University （2004 from CiNii）

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy （2004）
  • Ishitani Yoshihiro ID: 9000283187293

    Department of Electronics and Mechanical Engineering, Chiba University （2003 from CiNii）

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface. （2003）
  • Ishitani Yoshihiro ID: 9000401565771

    Articles in CiNii:1

    • Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region （2009）
  • Ishitani Yoshihiro ID: 9000401667159

    Articles in CiNii:1

    • 1997-11-15 （1997）
  • Ishitani Yoshihiro ID: 9000401696287

    Articles in CiNii:1

    • 2001-03-15 （2001）
  • Ishitani Yoshihiro ID: 9000401711759

    Articles in CiNii:1

    • Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film （2002）
  • Ishitani Yoshihiro ID: 9000401723729

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface （2003）
  • Ishitani Yoshihiro ID: 9000401733805

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy （2004）
  • Ishitani Yoshihiro ID: 9000401755044

    Articles in CiNii:1

    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth （2006）
  • Ishitani Yoshihiro ID: 9000401755872

    Articles in CiNii:1

    • Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy （2006）
  • Ishitani Yoshihiro ID: 9000401756207

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy （2006）
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