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  • ISHITANI Yoshihiro ID: 9000001854496

    Department of Electronics and Mechanical Engineering, Chiba University (2006 from CiNii)

    Articles in CiNii:2

    • Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy (2006)
    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth (2006)
  • ISHITANI Yoshihiro ID: 9000004785358

    Chiba Uhiv. (2013 from CiNii)

    Articles in CiNii:28

    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry (2004)
    • Observation of InN dots on N-polar GaN grown by RF-MBE : Investigation of growth mechanism of N-polar InN dots growth (2004)
    • Surface Stoichiometry Control of InN Grown by RF-MBE Using In-situ Spectroscopic Ellipsometry (2004)
  • ISHITANI Yoshihiro ID: 9000005582900

    Center for Frontier Electronics and Photonics, Chiba University:Department of Electronics and Mechanical Engineering, Chiba University (2002 from CiNii)

    Articles in CiNii:3

    • Temperature Dependence of Excitonic Γ_c-Γ_v Transition Energies of Ga_xIn_<1-x>P Crystals (2001)
    • The Γ_c-Γ_v Transition Energies of Al_xIn_<1-x>P Alloys (1997)
    • Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film (2002)
  • ISHITANI Yoshihiro ID: 9000015563571

    Department of Electronics and Mechanical Engineering, Chiba University (2003 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface (2003)
  • ISHITANI Yoshihiro ID: 9000107341939

    Graduate School of Electrical and Electronic Engineering and Venture Business Laboratory, Chiba University (2009 from CiNii)

    Articles in CiNii:1

    • Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region (2009)
  • ISHITANI Yoshihiro ID: 9000107363577

    Department of Electronics and Mechanical Engineering, Chiba University (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • ISHITANI Yoshihiro ID: 9000107390437

    Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University (2006 from CiNii)

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy (2006)
  • Ishitani Yoshihiro ID: 9000258134081

    Central Research Laboratory, Hitachi Ltd. 1–280 Higashikoigakubo, Kokubunji, Tokyo 185, Japan (1997 from CiNii)

    Articles in CiNii:1

    • The .GAMMA.c-.GAMMA.v Transition Energies of AlxIn1-xP Alloys. (1997)
  • Ishitani Yoshihiro ID: 9000258155488

    Department of Engineering I, Hiroshima University, 1-4-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Temperature Dependence of Excitonic .GAMMA.c-.GAMMA.v Transition Energies of GaxIn1-xP Crystals. (2001)
  • Ishitani Yoshihiro ID: 9000258173415

    Department of Electronics and Mechanical Engineering, Chiba University (2004 from CiNii)

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • Ishitani Yoshihiro ID: 9000283187293

    Department of Electronics and Mechanical Engineering, Chiba University (2003 from CiNii)

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface. (2003)
  • Ishitani Yoshihiro ID: 9000401565771

    Articles in CiNii:1

    • Fabrication of Asymmetric GaN/InN/InGaN/GaN Quantum-Well Light Emitting Diodes for Reducing the Quantum-Confined Stark Effect in the Blue-Green Region (2009)
  • Ishitani Yoshihiro ID: 9000401667159

    Articles in CiNii:1

    • 1997-11-15 (1997)
  • Ishitani Yoshihiro ID: 9000401696287

    Articles in CiNii:1

    • 2001-03-15 (2001)
  • Ishitani Yoshihiro ID: 9000401711759

    Articles in CiNii:1

    • Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film (2002)
  • Ishitani Yoshihiro ID: 9000401723729

    Articles in CiNii:1

    • Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface (2003)
  • Ishitani Yoshihiro ID: 9000401733805

    Articles in CiNii:1

    • Effect of Low Temperature Thin GaN Layer on ZnO Film Grown on Nitridated c-Sapphire by Molecular Beam Epitaxy (2004)
  • Ishitani Yoshihiro ID: 9000401755044

    Articles in CiNii:1

    • Effect of Precise Control of V/III Ratio on In-Rich InGaN Epitaxial Growth (2006)
  • Ishitani Yoshihiro ID: 9000401755872

    Articles in CiNii:1

    • Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy (2006)
  • Ishitani Yoshihiro ID: 9000401756207

    Articles in CiNii:1

    • Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy (2006)
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