Search Results1-20 of  25

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  • ISHIYAMA Takeshi ID: 9000005552955

    Graduate School of Natural Science and Technology, Okayama University (2007 from CiNii)

    Articles in CiNii:7

    • Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen (2005)
    • Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics (1997)
    • Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon (2007)
  • ISHIYAMA Toshihiko ID: 9000001720386

    NTT LSI Laboratories (1996 from CiNii)

    Articles in CiNii:1

    • Enhancement and Suppression of Band-to-Band Tunneling Current in Ultra-Thin nMOSFETs/SIMOX : Influence of Superficial Si Layer Thickness and It's Future Prospect (1996)
  • ISHIYAMA Toshihiko ID: 9000005677499

    NTT Basic Research Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen (nMOSFET/SIMOX) (1997)
  • ISHIYAMA Toshihiko ID: 9000005734909

    NTT LSI Laboratories (1995 from CiNii)

    Articles in CiNii:1

    • Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate (1995)
  • ISHIYAMA Toshihiko ID: 9000005890848

    NTT Telecommunications Energy Laboratories (2000 from CiNii)

    Articles in CiNii:1

    • Analysis of Interface Microdtructure Evolution in Separation by IMplanted Oxygen (SIMOX) Wafers (2000)
  • ISHIYAMA Toshihiko ID: 9000345436731

    八戸工業大学工学部 (2016 from CiNii)

    Articles in CiNii:1

    • 3C03 Formulation and visualization of the learning outcomes assessment (3):Development of the self-assessment test for student learning outcomes (2016)
  • ISHIYAMA Toshihiko ID: 9000408579356

    Hachinohe Institute of Technology (2019 from CiNii)

    Articles in CiNii:1

    • Transistor Technology Facing a Crucial Moment (2019)
  • Ishiyama Ishiyama/Toshihiko Toshihiko ID: 9000283831733

    Kushiro National College of Technology (2010 from CiNii)

    Articles in CiNii:1

    • A Novel MPPT Control Method for Thermoelectric Generator Using Thermal Difference Detection (2010)
  • Ishiyama Toshihiko ID: 9000002347855

    Articles in CiNii:1

    • Influence of Oxygen Dilution on Extremely-Thin Oxide Growth Mechanisms in the Rapid Thermal Oxidation of Monocrystalline Silicon (2000)
  • Ishiyama Toshihiko ID: 9000003429055

    Articles in CiNii:39

    • Analysis of Hot-carrier effect in a thin-film SOI Power MOSFET fabricated by RSDB (1999)
    • Far field of two circular piston vibrators (2004)
    • Case Study of PBL Seminar Class Applying Small Team-Based Competition Approach in Kushiro National College of Technology (2008)
  • Ishiyama Toshihiko ID: 9000240199762

    釧路工業高等専門学校情報工学科 (2012 from CiNii)

    Articles in CiNii:1

    • 4-222 Trial of brainstorming to advance the learning effect of PBL study (2012)
  • Ishiyama Toshihiko ID: 9000252972121

    NTT LSI Laboratories (1990 from CiNii)

    Articles in CiNii:1

    • Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography (1990)
  • Ishiyama Toshihiko ID: 9000258125729

    NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–01, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate. (1995)
  • Ishiyama Toshihiko ID: 9000258135569

    NTT Basic Research Laboratories, 3–1 Morinosato–Wakamiya, Atsugi, Kanagawa 243–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Influences of Superficial Si Layer Thickness on Band-to-Band Tunneling Current Characteristics in Ultra-Thin n-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor by Separation by IMplanted OXygen (nMOSFET/SIMOX). (1997)
  • Ishiyama Toshihiko ID: 9000258140867

    NTT Integrated Information & Energy Systems Laboratories, 3–9–11 Midori–cho, Musashino, Tokyo 180, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power ICs. (1998)
  • Ishiyama Toshihiko ID: 9000258153250

    NTT Telecommunications Energy Laboratories, 3-9-11 Midori-cho, Musashino-shi, Tokyo 180-8585, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen (SIMOX) Wafers. (2000)
  • Ishiyama Toshihiko ID: 9000283590488

    Kushiro National College of Technology (2011 from CiNii)

    Articles in CiNii:1

    • A Novel MPPT Control Method for Thermoelectric Generation by Temperature Detection (2011)
  • Ishiyama Toshihiko ID: 9000347096437

    Kushiro National College of Technology (2011 from CiNii)

    Articles in CiNii:1

    • A Novel MPPT Control Method of Thermoelectric Power Generation with Single Current Sensor (2011)
  • Ishiyama Toshihiko ID: 9000392732481

    Articles in CiNii:1

    • Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography (1990)
  • Ishiyama Toshihiko ID: 9000401617091

    Articles in CiNii:1

    • Effects of Photo- and Auger Electron Scattering on Resolution and Linewidth Control in SR Lithography (1990)
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