Search Results1-20 of  42

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  • ITABASHI Naoshi ID: 9000001505535

    Central Research Laboratory, Hitachi, Ltd. (2001 from CiNii)

    Articles in CiNii:2

    • 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry (2001)
    • Precise CD-Controlled Gate Etching Using UHF-ECR Plasma (2000)
  • ITABASHI Naoshi ID: 9000005463596

    Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:2

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
    • UHF-Band ECR Plasma (1997)
  • ITABASHI Naoshi ID: 9000005545940

    Central Research Laboratory, Hitachi, Ltd. (1997 from CiNii)

    Articles in CiNii:3

    • Thermal and Ion-Induced Reactions on a Chlorine-Adsorbed GaAs(100) Surface Studied by Metastable-Atom De-excitation Electron Spectroscopy (1995)
    • Positive Charge Generation at a SiO_2/Si Interface due to Bombardment with Metastable Atoms (1997)
    • Surface Reaction Induced by Multiply-Charged Ions (1994)
  • ITABASHI Naoshi ID: 9000005734118

    Central Research Laboratory, Hitachi, Ltd. (1995 from CiNii)

    Articles in CiNii:1

    • Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions (1995)
  • ITABASHI Naoshi ID: 9000021531174

    Central Research Laboratory, Hitachi Ltd. (1999 from CiNii)

    Articles in CiNii:1

    • サマリー・アブストラクト (1999)
  • ITABASHI Naoshi ID: 9000107345984

    Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies(ASET) (1998 from CiNii)

    Articles in CiNii:1

    • Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing (1998)
  • ITABASHI Naoshi ID: 9000107390235

    Central Research Laboratory, Hitachi Ltd. (2006 from CiNii)

    Articles in CiNii:1

    • A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 Plasmas (2006)
  • ITABASHI Naoshi ID: 9000253648474

    Central Research Laboratory, Hitachi Ltd. (1994 from CiNii)

    Articles in CiNii:1

    • Photon-Stimulated Ion Desorption from Chlorine-Adsorbed GaAs Surfaces. (1994)
  • ITABASHI Naoshi ID: 9000283413863

    <I>Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies</I> (1998 from CiNii)

    Articles in CiNii:1

    • Analyses of Radicals in Etching Plasma Using Laser Spectroscopy in Association of Super-Advanced Electronics Technologies (1998)
  • Itabashi Naoshi ID: 9000004966873

    Central Research Laboratory,Hitachi,Ltd. (1993 from CiNii)

    Articles in CiNii:1

    • Synchrotron-radiation induced desorption from chlorine-adsorbed GaAs surface (1993)
  • Itabashi Naoshi ID: 9000243908535

    Central Research Laboratory, Hitachi Ltd. (2014 from CiNii)

    Articles in CiNii:1

    • Noninvasively measuring respiratory activity of rat primary hepatocyte spheroids by scanning electrochemical microscopy (2014)
  • Itabashi Naoshi ID: 9000252967670

    Department of Electronics, Faculty of Engineering, Nagoya University (1988 from CiNii)

    Articles in CiNii:1

    • Measurement of the SiH<SUB>3</SUB> Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy (1988)
  • Itabashi Naoshi ID: 9000252970262

    Department of Electronics, Faculty of Engineering, Nagoya University (1989 from CiNii)

    Articles in CiNii:1

    • Diffusion Coefficient and Reaction Rate Constant of the SiH<SUB>3</SUB> Radical in Silane Plasma (1989)
  • Itabashi Naoshi ID: 9000252972777

    Department of Electronics, Faculty of Engineering, Nagoya University (1990 from CiNii)

    Articles in CiNii:1

    • SiH<SUB>3</SUB> Radical Density in Pulsed Silane Plasma (1990)
  • Itabashi Naoshi ID: 9000252974568

    Department of Electronics, Faculty of Engineering, Nagoya University (1990 from CiNii)

    Articles in CiNii:1

    • Spatial Distribution of SiH<SUB>3</SUB> Radicals in RF Silane Plasma (1990)
  • Itabashi Naoshi ID: 9000252974690

    Department of Electronics, Faculty of Engineering, Nagoya University (1990 from CiNii)

    Articles in CiNii:1

    • Measurements of the CF Radical in DC Pulsed CF<SUB>4</SUB>/H<SUB>2</SUB> Discharge Plasma Using Infrared Diode Laser Absorption Spectroscopy (1990)
  • Itabashi Naoshi ID: 9000252984955

    Central Research Laboratory, Hitachi Ltd. (1993 from CiNii)

    Articles in CiNii:1

    • Photon-Stimulated Ion Desorption from Semiconductor Surfaces (1993)
  • Itabashi Naoshi ID: 9000258060082

    Department of Epileptology, Tohoku University School of Medicine (2012 from CiNii)

    Articles in CiNii:1

    • Physicians' emotional barriers toward epilepsy surgery (2012)
  • Itabashi Naoshi ID: 9000258120442

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185 (1994 from CiNii)

    Articles in CiNii:1

    • Surface Reaction Induced by Multiply-Charged Ions. (1994)
  • Itabashi Naoshi ID: 9000258125220

    Central Research Laboratory, Hitachi, Ltd., Kokubunji–shi, Tokyo 185, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Desorption of Ga and As Atoms from GaAs Surface Induced by Slow Multiply Charged Ar Ions. (1995)
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