Search Results101-108 of  108

  • Itoh Hitoshi ID: 9000401687318

    Articles in CiNii:1

    • Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy: Theoretical Process Optimization Procedure (1) (2000)
  • Itoh Hitoshi ID: 9000401692589

    Articles in CiNii:1

    • Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based onAb InitioCalculations: Theoretical Process Optimization Procedure (2) (2000)
  • Itoh Hitoshi ID: 9000401709531

    Articles in CiNii:1

    • Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al UsingIn SituInfrared Reflection Absorption Spectroscopy: Teoretical Optimization Procedure (3) (2002)
  • Itoh Hitoshi ID: 9000401788218

    Articles in CiNii:1

    • Effects of Water Desorption from SiO2Substrates on the Thickness of Manganese Oxide Diffusion Barrier Layer Formed by Chemical Vapor Deposition (2010)
  • Itoh Hitoshi ID: 9000401990165

    Articles in CiNii:1

    • New line plasma source excited by 2.45 GHz microwave at atmospheric pressure (2015)
  • Itoh Hitoshi ID: 9000402019265

    Articles in CiNii:1

    • High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (2013)
  • Itoh Hitoshi ID: 9000402033520

    Articles in CiNii:1

    • Characteristics of an atmospheric-pressure line plasma excited by 2.45 GHz microwave travelling wave (2015)
  • Itoh Hitoshi ID: 9000402054549

    Articles in CiNii:1

    • Investigation on the Drift of GaAs MESFET's by High Frequency Parameters (1980)
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