Search Results1-20 of  25

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  • IWABUCHI Toshiyuki ID: 9000005541337

    Research and Development Group, Oki Electric Industry Co., Ltd. (1998 from CiNii)

    Articles in CiNii:6

    • Orientation Control of Sr_<0.7>Bi_<2.3>Ta_2O_9 Thin Films by Chemical Process (1996)
    • Effect of Annealing Method to Crystalize on Sr_<0.9>Bi_<2.3>Ta_20_<9+α> Thin Film Properties Formed from Alkoxide Solution (1998)
    • Nanometer Pattern Transfer by VUV Lithography with a D_2 Lamp : Lithography Technology : (1991)
  • IWABUCHI Toshiyuki ID: 9000020327400

    Research Laboratory, Oki Electric Industry Ltd. (1983 from CiNii)

    Articles in CiNii:1

    • Annealing Effects in a-Si:H Thin Films Prepared by Glow Discharge Method (1983)
  • Iwabuchi Toshiyuki ID: 9000252762747

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation (1990)
  • Iwabuchi Toshiyuki ID: 9000252965544

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1988 from CiNii)

    Articles in CiNii:1

    • The Dielectric Reliability of Very Thin SiO<SUB>2</SUB> Films Grown by Rapid Thermal Processing (1988)
  • Iwabuchi Toshiyuki ID: 9000252973606

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1990 from CiNii)

    Articles in CiNii:1

    • 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs (1990)
  • Iwabuchi Toshiyuki ID: 9000252976593

    Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Role of SiN Bond Formed by N<SUB>2</SUB>O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO<SUB>2</SUB> Films (1991)
  • Iwabuchi Toshiyuki ID: 9000252980273

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1992 from CiNii)

    Articles in CiNii:1

    • Kinetics of Rapid Thermal Oxidation of Silicon (1992)
  • Iwabuchi Toshiyuki ID: 9000252985615

    Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd. (1993 from CiNii)

    Articles in CiNii:1

    • Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films (1993)
  • Iwabuchi Toshiyuki ID: 9000253028014

    Oki Electric Industry Co., Ltd. (1997 from CiNii)

    Articles in CiNii:1

    • Design of Diphenylether Diazonium Salt and Application to Dual Color Direct Thermal Recording. (1997)
  • Iwabuchi Toshiyuki ID: 9000258135821

    Microsystem Technology Laboratory, Oki Electric Industry Co., Ltd., 550–5 Higashiasakawa–cho Hachioji–shi, Tokyo 193, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Orientation Control of Sr0.7Bi2.3Ta2O9+.ALPHA. Thin Films by Chemical Liquid Deposition. (1997)
  • Iwabuchi Toshiyuki ID: 9000392696826

    Articles in CiNii:1

    • The Dielectric Reliability of Very Thin SiO<SUB>2</SUB> Films Grown by Rapid Thermal Processing (1988)
  • Iwabuchi Toshiyuki ID: 9000392715421

    Articles in CiNii:1

    • 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs (1990)
  • Iwabuchi Toshiyuki ID: 9000392721240

    Articles in CiNii:1

    • Kinetics of Rapid Thermal Oxidation of Silicon (1992)
  • Iwabuchi Toshiyuki ID: 9000392725430

    Articles in CiNii:1

    • Role of SiN Bond Formed by N<SUB>2</SUB>O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO<SUB>2</SUB> Films (1991)
  • Iwabuchi Toshiyuki ID: 9000392726212

    Articles in CiNii:1

    • Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation (1990)
  • Iwabuchi Toshiyuki ID: 9000392737227

    Articles in CiNii:1

    • Novel Single-Step Rapid Thermal Oxynitridation Technology for Forming Highly Reliable Electrically Erasable Programmable Read-Only Memory Tunnel Oxide Films (1993)
  • Iwabuchi Toshiyuki ID: 9000401609705

    Articles in CiNii:1

    • The Dielectric Reliability of Very Thin SiO2Films Grown by Rapid Thermal Processing (1988)
  • Iwabuchi Toshiyuki ID: 9000401618728

    Articles in CiNii:1

    • 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs (1990)
  • Iwabuchi Toshiyuki ID: 9000401619454

    Articles in CiNii:1

    • Optimization of the Amorphous Layer Thickness and the Junction Depth in the Preamorphization Method for Shallow-Junction Formation (1990)
  • Iwabuchi Toshiyuki ID: 9000401623870

    Articles in CiNii:1

    • Role of SiN Bond Formed by N2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO2Films (1991)
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