Search Results1-19 of  19

  • IWAHASHI Tomoya ID: 9000005651414

    Matsushita Electric Works, Ltd. (2007 from CiNii)

    Articles in CiNii:4

    • Fabrication of a-Plane GaN Substrate Using the Sr-Na Flux Liquid Phase Epitaxy Technique (2007)
    • Overdamped NbN Josephson Junctions Based on Nb/AlO_x/Nb Trilayer Technology (1999)
    • Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux (2002)
  • IWAHASHI Tomoya ID: 9000107313724

    Matsushita Electric Works, Ltd. (2007 from CiNii)

    Articles in CiNii:1

    • Liquid Phase Epitaxy Growth of m-Plane GaN Substrate Using the Na Flux Method (2007)
  • IWAHASHI Tomoya ID: 9000107323108

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • IWAHASHI Tomoya ID: 9000107327709

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • IWAHASHI Tomoya ID: 9000107338723

    Department of Electrical Engineering, Osaka University (2004 from CiNii)

    Articles in CiNii:1

    • Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE) (2004)
  • IWAHASHI Tomoya ID: 9000107376735

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System (2003)
  • Iwahashi Tomoya ID: 9000258164848

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy(LPE) Technique. (2003)
  • Iwahashi Tomoya ID: 9000258164931

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Iwahashi Tomoya ID: 9000258167964

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System (2003)
  • Iwahashi Tomoya ID: 9000258168138

    Department of Electrical Engineering, Osaka University (2003 from CiNii)

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • Iwahashi Tomoya ID: 9000398144481

    Panasonic Corporation, Eco Solutions Company (2018 from CiNii)

    Articles in CiNii:1

    • Omnidirectional Reflector based on Transparent Oxide Materials for Light Extraction Enhancement of Organic and Inorganic Solid-state Light Emitting Devices (2018)
  • Iwahashi Tomoya ID: 9000401712372

    Articles in CiNii:1

    • Synthesis of Bulk GaN Single Crystals Using Na-Ca Flux (2002)
  • Iwahashi Tomoya ID: 9000401722422

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Iwahashi Tomoya ID: 9000401722753

    Articles in CiNii:1

    • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique (2003)
  • Iwahashi Tomoya ID: 9000401723034

    Articles in CiNii:1

    • Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System (2003)
  • Iwahashi Tomoya ID: 9000401723310

    Articles in CiNii:1

    • Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System (2003)
  • Iwahashi Tomoya ID: 9000401732946

    Articles in CiNii:1

    • Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE) (2004)
  • Iwahashi Tomoya ID: 9000401764672

    Articles in CiNii:1

    • 2007-01-19 (2007)
  • Iwahashi Tomoya ID: 9000401765256

    Articles in CiNii:1

    • Liquid Phase Epitaxy Growth ofm-Plane GaN Substrate Using the Na Flux Method (2007)
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