Search Results1-6 of  6

  • IWASE Yoshimichi ID: 9000000178508

    School of Science and School of Engineering, Tokai University (1998 from CiNii)

    Articles in CiNii:1

    • Characteristics of the laser hardening with various absorbents (1998)
  • IWASE Yoshimichi ID: 9000252926283

    School of Science and School of Engineeringlbkai University (1998 from CiNii)

    Articles in CiNii:1

    • 波形制御パルスYAGレーザによるアルミ合金の溶接 (1998)
  • IWASE Yoshimichi ID: 9000256741780

    Institute of Materials Science, University of Tsukuba (1985 from CiNii)

    Articles in CiNii:1

    • Precision measurements of the Doppler broadening of positron annihilation radiations using a simultaneous and comparative detection technique. (1985)
  • Iwase Yoshimichi ID: 9000252965948

    Department of Electronic Engineering, University of Tokyo (1988 from CiNii)

    Articles in CiNii:1

    • Effects of PAs<I><SUB>x</SUB></I>N<I><SUB>y</SUB></I> Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As Metal-Insulator-Semiconductor Field Effect Transistors (1988)
  • Iwase Yoshimichi ID: 9000392696256

    Articles in CiNii:1

    • Effects of PAs<I><SUB>x</SUB></I>N<I><SUB>y</SUB></I> Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As Metal-Insulator-Semiconductor Field Effect Transistors (1988)
  • Iwase Yoshimichi ID: 9000401610081

    Articles in CiNii:1

    • Effects of PAsxNyDeposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In0.53Ga0.47As Metal-Insulator-Semiconductor Field Effect Transistors (1988)
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