Search Results21-40 of  125

  • IWAYA Motoaki ID: 9000405634555

    Articles in CiNii:1

    • Role of surface defects in the efficiency degradation of GaInN-based green light-emitting diodes (2019)
  • Iwaya Motoaki ID: 9000017405075

    名城大学理工学部 (2010 from CiNii)

    Articles in CiNii:1

    • The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)(News of JACG) (2010)
  • Iwaya Motoaki ID: 9000018857215

    名城大学工学部材料機能工学科 (2012 from CiNii)

    Articles in CiNii:1

    • Breakthrough in nitride crystal growth for next generation devices(Preface) (2012)
  • Iwaya Motoaki ID: 9000047210495

    Articles in CiNii:1

    • Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy (2006)
  • Iwaya Motoaki ID: 9000047210505

    Articles in CiNii:1

    • Anisotropically Biaxial Strain ina-Plane AlGaN on GaN Grown onr-Plane Sapphire (2006)
  • Iwaya Motoaki ID: 9000048796022

    Articles in CiNii:1

    • Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient (2009)
  • Iwaya Motoaki ID: 9000052058286

    Articles in CiNii:1

    • AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage (2011)
  • Iwaya Motoaki ID: 9000076230479

    Articles in CiNii:1

    • Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes (2011)
  • Iwaya Motoaki ID: 9000082850104

    Articles in CiNii:1

    • High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio (2006)
  • Iwaya Motoaki ID: 9000238156594

    名城大学工学部 (2013 from CiNii)

    Articles in CiNii:1

    • International Workshop on Nitride Semiconductors 2012(News of JACG) (2013)
  • Iwaya Motoaki ID: 9000258140834

    Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku–ku, Nagoya 468–8502, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN. (1998)
  • Iwaya Motoaki ID: 9000258150197

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer. (2000)
  • Iwaya Motoaki ID: 9000258155770

    Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Fracture of AlxGa1-xN/GaN Heterostructure. Compositional and Impurity Dependence. (2001)
  • Iwaya Motoaki ID: 9000258156718

    High-Tech Research Center, Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan (2001 from CiNii)

    Articles in CiNii:1

    • Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer. (2001)
  • Iwaya Motoaki ID: 9000258172237

    Faculty of Science and Technology, High-Tech Research Center, 21st-Century COE Program “Nano Factory”, Meijo University (2004 from CiNii)

    Articles in CiNii:1

    • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • Iwaya Motoaki ID: 9000258181518

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
  • Iwaya Motoaki ID: 9000258182613

    Faculty of Science and Technology, 21st Century-COE “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • Iwaya Motoaki ID: 9000283193994

    Department of Materials Science and Engineering, 21st-Century COE Program “Nano Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure (2005)
  • Iwaya Motoaki ID: 9000283194001

    Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005 from CiNii)

    Articles in CiNii:1

    • Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate (2005)
  • Iwaya Motoaki ID: 9000327084104

    名城大学理工学部 (2016 from CiNii)

    Articles in CiNii:1

    • The 6th International Symposium on Growth of III-Nitrides(News of JACG) (2016)
Page Top