Search Results61-80 of  124

  • Iwaya Motoaki ID: 9000401717193

    Articles in CiNii:1

    • High-Power UV-Light-Emitting Diode on Sapphire (2003)
  • Iwaya Motoaki ID: 9000401733475

    Articles in CiNii:1

    • 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN (2004)
  • Iwaya Motoaki ID: 9000401737650

    Articles in CiNii:1

    • Impact of H2-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer (2005)
  • Iwaya Motoaki ID: 9000401743746

    Articles in CiNii:1

    • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate (2005)
  • Iwaya Motoaki ID: 9000401754657

    Articles in CiNii:1

    • High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact (2006)
  • Iwaya Motoaki ID: 9000401755490

    Articles in CiNii:1

    • Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact (2006)
  • Iwaya Motoaki ID: 9000401765403

    Articles in CiNii:1

    • Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy (2007)
  • Iwaya Motoaki ID: 9000401766610

    Articles in CiNii:1

    • Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth (2007)
  • Iwaya Motoaki ID: 9000401793778

    Articles in CiNii:1

    • High-Temperature Operation of Normally Off-Mode AlGaN/GaN Heterostructure Field-Effect Transistors with p-GaN Gate (2011)
  • Iwaya Motoaki ID: 9000401802878

    Articles in CiNii:1

    • Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma (2012)
  • Iwaya Motoaki ID: 9000401804707

    Articles in CiNii:1

    • 2012-03-12 (2012)
  • Iwaya Motoaki ID: 9000401805641

    Articles in CiNii:1

    • Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates (2012)
  • Iwaya Motoaki ID: 9000401979135

    Articles in CiNii:1

    • Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis (2019)
  • Iwaya Motoaki ID: 9000401979149

    Articles in CiNii:1

    • Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy (2019)
  • Iwaya Motoaki ID: 9000401980283

    Articles in CiNii:1

    • Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template (2017)
  • Iwaya Motoaki ID: 9000401986944

    Articles in CiNii:1

    • Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N (2013)
  • Iwaya Motoaki ID: 9000401987767

    Articles in CiNii:1

    • Multijunction GaInN-based solar cells using a tunnel junction (2014)
  • Iwaya Motoaki ID: 9000401993374

    Articles in CiNii:1

    • GaInN-based tunnel junctions with graded layers (2016)
  • Iwaya Motoaki ID: 9000401993673

    Articles in CiNii:1

    • Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer (2016)
  • Iwaya Motoaki ID: 9000401993725

    Articles in CiNii:1

    • Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors (2016)
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