Search Results1-16 of  16

  • IZAWA Masaru ID: 9000000494325

    株式会社ジェイアール西日本テクノス (2001 from CiNii)

    Articles in CiNii:1

    • 「変人」雑感 (2001)
  • IZAWA Masaru ID: 9000002995589

    住友金属工業(株)総合技術研究所 (2002 from CiNii)

    Articles in CiNii:3

    • Development of hot rolling method by rolling oil on lubricant film (1997)
    • Development of Chemical-Reaction Coating Lubrication Method for Hot Rolling Work Roll of Stainless-Steel H-Beams (2002)
    • Effect of Roll Cooling Water Property on Corrosive Wear of Tungsten Carbide Rolls (1996)
  • IZAWA Masaru ID: 9000006401573

    Articles in CiNii:7

    • 240-nm Pitch Aluminum Interconnects Formation by UHF-ECR Plasma Etching Incorporating TM Bias and Novel-Gas Chemistry (2001)
    • Investigation of Etching Mechanism in Fluorocarbon Plasma (2007)
    • 第29回ドライプロセス国際シンポジウム報告 (2008)
  • Izawa Masaru ID: 9000019290145

    Articles in CiNii:1

    • Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing (2012)
  • Izawa Masaru ID: 9000019407050

    Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan (2009 from CiNii)

    Articles in CiNii:1

    • Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching (2009)
  • Izawa Masaru ID: 9000019437161

    Articles in CiNii:1

    • Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements (2008)
  • Izawa Masaru ID: 9000019537841

    Articles in CiNii:1

    • Investigation of Bowing Reduction in SiO2 Etching Taking into Account Radical Sticking in a Hole (2007)
  • Izawa Masaru ID: 9000257701000

    Production Engineering Research Laboratory, Hitachi, Ltd. (1991 from CiNii)

    Articles in CiNii:1

    • Chemistry of organosilicon compounds. 282. Ab initio MO study of the reaction of pentacoordinate allylsilicates with aldehydes. (1991)
  • Izawa Masaru ID: 9000258653689

    Hitachi, Ltd., Central Research Laboratory (2010 from CiNii)

    Articles in CiNii:1

    • Improvement of High Aspect Ratio Contact Etching Performance by using Real-Time Wafer Temperature Control (2010)
  • Izawa Masaru ID: 9000333074698

    Articles in CiNii:1

    • Thermal cyclic etching of silicon nitride using formation and desorption of ammonium fluorosilicate (2016)
  • Izawa Masaru ID: 9000361690989

    Articles in CiNii:1

    • Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate (2017)
  • Izawa Masaru ID: 9000401781973

    Articles in CiNii:1

    • Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching (2009)
  • Izawa Masaru ID: 9000401808000

    Articles in CiNii:1

    • Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing (2012)
  • Izawa Masaru ID: 9000401993814

    Articles in CiNii:1

    • Thermal cyclic etching of silicon nitride using formation and desorption of ammonium fluorosilicate (2016)
  • Izawa Masaru ID: 9000402008860

    Articles in CiNii:1

    • Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing (2012)
  • Izawa Masaru ID: 9000402043184

    Articles in CiNii:1

    • Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate (2017)
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