Search Results1-20 of  46

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  • Izunome Koji ID: 9000016779486

    Articles in CiNii:1

    • Precise fabrication of silicon wafers using gas cluster ion beams (2008)
  • Izunome Koji ID: 9000016779533

    Articles in CiNii:1

    • Precise fabrication of silicon wafers using gas cluster ion beams (2008)
  • Izunome Koji ID: 9000278501216

    Articles in CiNii:1

    • Chemical Reaction of Sb Atoms in Si Melt (1996)
  • IZUNOME Koji ID: 9000000059473

    R&D Center, Toshiba Ceramics Co., Ltd. (1998 from CiNii)

    Articles in CiNii:1

    • Wet Cleaning Technology for Silicon Wafer (1998)
  • IZUNOME Koji ID: 9000002549436

    木村融液動態プロジェクト (1996 from CiNii)

    Articles in CiNii:5

    • Chemical Reaction of Sb Atoms in Si Melt (1996)
    • Chemical Reaction of Sb Atoms in Si Melt (1995)
    • Dependence of Time Dependent Dielectric Breakdown Characteristics on Mechanism for Silicon Epitaxial Growth on Misoriented Czochralski Silicon Crystal (1995)
  • IZUNOME Koji ID: 9000005660122

    Kimura METAMELT Project, ERATO, JRDC, Tsukuba Research Consortium (1995 from CiNii)

    Articles in CiNii:1

    • Estimation of Surface Tension of Molten Silicon Using a Dynamic Hanging Drop (1995)
  • IZUNOME Koji ID: 9000045707461

    Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium (1995 from CiNii)

    Articles in CiNii:1

    • Influence of Surface Melt Flow on Oxygen Inhomogeneity in Czochralski-Grown Silicon Single Crystal:Studied by Double-Layered Czochralski(DLCZ)Melt Quenching Technique (1995)
  • IZUNOME Koji ID: 9000107347412

    Articles in CiNii:1

    • Light Point Defects on Hydrogen Annealed Silicon Wafer (1997)
  • IZUNOME Koji ID: 9000107379213

    Articles in CiNii:1

    • Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth (1995)
  • IZUNOME Koji ID: 9000362197332

    Global Wafers Japan Co., Ltd. (2016 from CiNii)

    Articles in CiNii:1

    • Recent Market and Technology Trends of Silicon Wafer (2016)
  • Izunome Koji ID: 9000024940285

    Articles in CiNii:1

    • Critical thickness of strained Si on SiGe bulk virtual substrate by low-pressure chemical vapor deposition (2007)
  • Izunome Koji ID: 9000025059694

    Articles in CiNii:1

    • Crystallinity investigation of compositionally graded SiGe layers by synchrotron X-ray cross-sectional diffraction (2008)
  • Izunome Koji ID: 9000065616972

    Articles in CiNii:1

    • Effect of Hydrogen Termination on Surface Roughness Variation of Si(110) by Reflow Oxidation during High-Temperature Ar Annealing (2010)
  • Izunome Koji ID: 9000066427197

    Articles in CiNii:1

    • Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing (2010)
  • Izunome Koji ID: 9000070282050

    Articles in CiNii:1

    • Gettering Efficiency of Si(110)/Si(100) Directly Bonded Hybrid Crystal Orientation Substrates (2010)
  • Izunome Koji ID: 9000084186024

    Articles in CiNii:1

    • Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates (2009)
  • Izunome Koji ID: 9000252984075

    Toshiba Ceramics, R & D Center (1992 from CiNii)

    Articles in CiNii:1

    • Periodic Step and Terrace Formation on Si(100) Surface during Si Epitaxial Growth by Atmospheric Chemical Vapor Deposition (1992)
  • Izunome Koji ID: 9000258122774

    Tsukuba Research Consortium, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26 (1994 from CiNii)

    Articles in CiNii:1

    • Relationship between Different Interfacial Phases and Oxygen Solubility in Silicon Melt. (1994)
  • Izunome Koji ID: 9000258123182

    Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26 (1994 from CiNii)

    Articles in CiNii:1

    • Effect of Background Gas Pressure on Evaporation of Oxides from Sb-Doped Si Melt. (1994)
  • Izunome Koji ID: 9000258125205

    Kimura METAMELT Project, ERATO, JRDC, 5–9–9 Tokodai, Tsukuba, Ibaraki 300–26, Japan (1995 from CiNii)

    Articles in CiNii:1

    • Evaluation of Evaporated Species from Silicon Melt Surface during Sb-Doped Czochralski Silicon Crystal Growth. (1995)
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