Search Results1-3 of  3

  • Imai Akihumi ID: 9000018453446

    Articles in CiNii:1

    • Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts (2011)
  • Imai Akihumi ID: 9000401797701

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
  • Imai Akihumi ID: 9000401998570

    Articles in CiNii:1

    • Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts (2011)
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