Search Results1-20 of  21

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  • Inumiya Seiji ID: 9000024931358

    Articles in CiNii:1

    • Impact of gate metal-induced stress on performance modulation in gate-last metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2007)
  • Inumiya Seiji ID: 9000024933703

    Articles in CiNii:1

    • Interfacial reaction of TiN/HfSiON gate stack in high-temperature annealing for gate-first metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials) (2007)
  • Inumiya Seiji ID: 9000403869731

    Articles in CiNii:1

    • Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing (2013)
  • INUMIYA Seiji ID: 9000002166312

    Semiconductor Company, Toshiba Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N) (2004)
  • INUMIYA Seiji ID: 9000004781321

    Toshiba Corporation (2009 from CiNii)

    Articles in CiNii:16

    • HfSiON gate dielectrics (2004)
    • Novel SiON process technology for ultrathin and ultralow leakage gate dielectrics (2005)
    • A Cost-Conscious 32nm CMOS Platform Technology with Advanced Single Exposure Lithography and Gate-First Metal Gate/High-K Process (2009)
  • INUMIYA Seiji ID: 9000005746036

    Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation (2000 from CiNii)

    Articles in CiNii:4

    • Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs (1998)
    • Sub 1.3nm Amorphous Ta_2O_5 Gate Dielectrics for Damascene Metal Gate Transistor (1999)
    • Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1μm MOSFET_S (1999)
  • INUMIYA Seiji ID: 9000016261788

    Semiconductor Leading Edge Technologies, Inc. (Selete) (2007 from CiNii)

    Articles in CiNii:5

    • Extendibility of High Mobility HfSiON Gate Dielectrics (2005)
    • Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation (2006)
    • Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation (2006)
  • INUMIYA Seiji ID: 9000404509117

    Semiconductor Company, Toshiba Corporation (2005 from CiNii)

    Articles in CiNii:1

    • Novel SiON process technology for ultrathin and ultralow leakage gate dielectrics (2005)
  • INUMIYA Seiji ID: 9000404509212

    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company (2004 from CiNii)

    Articles in CiNii:1

    • HfSiON gate dielectrics (2004)
  • Inumiya Seiji ID: 9000017401672

    Semiconductor Leading Edge Technologies, Inc. (2007 from CiNii)

    Articles in CiNii:6

    • Determination of Time to Breakdown of 0.8-1.2nm EOT HfSiON Gate Dielectrics with Poly-Si and Metal Gate Electrodes (2006)
    • A Thermally-Stable Sub-0.9nm EOT TaSix/HfSiON Gate Stack with High Electron Mobility, Suitable for Gate-First Fabrication of hp45 LOP Devices (2006)
    • Characterization of Open Volumes in High-k Gate Dielectrics by Using Monoenergetic Positron Beams (2006)
  • Inumiya Seiji ID: 9000024932119

    Articles in CiNii:1

    • Homogeneity improvements in the dielectric characteristics of HfSiON films by nitridation (Special issue: Dielectric thin films for future ULSI devices: science and technology) (2007)
  • Inumiya Seiji ID: 9000025096460

    Articles in CiNii:1

    • Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing (Special Issue: Solid State Devices & Materials) (2006)
  • Inumiya Seiji ID: 9000066447725

    Articles in CiNii:1

    • Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON (2007)
  • Inumiya Seiji ID: 9000258151482

    Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation,<BR> 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Sub-1.3nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors. (2000)
  • Inumiya Seiji ID: 9000283571851

    Semiconductor Company, Toshiba Corporation (2003 from CiNii)

    Articles in CiNii:1

    • Characterization of high-k materials for the advancement of high-speed ULSIs (2003)
  • Inumiya Seiji ID: 9000401679849

    Articles in CiNii:1

    • 1999-04-30 (1999)
  • Inumiya Seiji ID: 9000401688287

    Articles in CiNii:1

    • Sub-1.3 nm Amorphous Tantalum Pentoxide Gate Dielectrics for Damascene Metal Gate Transistors (2000)
  • Inumiya Seiji ID: 9000401757647

    Articles in CiNii:1

    • 2007-04-24 (2007)
  • Inumiya Seiji ID: 9000401759238

    Articles in CiNii:1

    • 2007-05-17 (2007)
  • Inumiya Seiji ID: 9000401768286

    Articles in CiNii:1

    • 2008-04-25 (2008)
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