Search Results1-8 of  8

  • ISHIGAMI Shun-ichiro ID: 9000004967160

    Articles in CiNii:8

    • テクノフロント 新世代の太陽光発電 (2009)
    • Structural Characterization of a Bonded Silicon-on-Insulator Layer with Voids (1993)
    • Evaluation of a bonding interface on a direct bonded wafer with contactless LBIC method (1994)
  • Ishigami Shun-ichiro ID: 9000401635721

    Articles in CiNii:1

    • Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer (1993)
  • Ishigami Shun-ichiro ID: 9000401636632

    Articles in CiNii:1

    • Effect of Interstitial Oxygen on Formation of Amorphous SiOxLayerin Directly Bonded Czochralski Silicon Wafers (1993)
  • Ishigami Shun-ichiro ID: 9000401640454

    Articles in CiNii:1

    • Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure (1994)
  • Ishigami Shun-ichiro ID: 9000401645682

    Articles in CiNii:1

    • A Study of Defect Formation Mechanism at Edges of Local Oxidation of Silicon Structure (1994)
  • Ishigami Shun-ichiro ID: 9000401650222

    Articles in CiNii:1

    • Effect of Native Oxide upon Formation of Amorphous $\bf SiO_{\ninmbi x}$ Layer at the Interface of Directly Bonded Silicon Wafers (1995)
  • Ishigami Shun-ichiro ID: 9000392722270

    Articles in CiNii:1

    • Effect of Interstitial Oxygen on Formation of Amorphous SiO<I><SUB>x</SUB></I> Layer in Directly Bonded Czochralski Silicon Wafers (1993)
  • Ishigami Shun-ichiro ID: 9000392724784

    Articles in CiNii:1

    • Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer (1993)
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