Search Results1-16 of  16

  • ISHIHARA Seiya ID: 9000404639659

    Meiji University (2019 from CiNii)

    Articles in CiNii:1

    • Fabrication of 2D Layered Materials by Sputtering Deposition (2019)
  • Ishihara Seiya ID: 9000006642061

    Articles in CiNii:1

    • The outcome of group-consultation for caregivers who take care of the patients act at home and in the community (2008)
  • Ishihara Seiya ID: 9000307256136

    School of Science and Technology, Meiji University (2014 from CiNii)

    Articles in CiNii:1

    • Epitaxial Growth of Ge and Ge_<1-x>Sn_x Films by MOCVD (2014)
  • Ishihara Seiya ID: 9000391837645

    Graduate School of Advanced Integration Science, Chiba Univ. (2017 from CiNii)

    Articles in CiNii:1

    • Development of the information presentation system using optical sensors and tablet PC and evaluation of its contents (2017)
  • Ishihara Seiya ID: 9000391837901

    Chiba University (2017 from CiNii)

    Articles in CiNii:1

    • The effects of product display and consumer's personality on information-seeking behavior for OTC drugs (2017)
  • Ishihara Seiya ID: 9000398982725

    Meiji University|JSPS Research Fellow (2018 from CiNii)

    Articles in CiNii:1

    • Fabrication of 2D Layered Material by Sputtering Deposition (2018)
  • Ishihara Seiya ID: 9000401980509

    Articles in CiNii:1

    • Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness (2017)
  • Ishihara Seiya ID: 9000402026371

    Articles in CiNii:1

    • 2014-10-02 (2014)
  • Ishihara Seiya ID: 9000402029156

    Articles in CiNii:1

    • Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs (2015)
  • Ishihara Seiya ID: 9000402035336

    Articles in CiNii:1

    • Improving crystalline quality of sputtering-deposited MoS2thin film by postdeposition sulfurization annealing using (t-C4H9)2S2 (2016)
  • Ishihara Seiya ID: 9000402036714

    Articles in CiNii:1

    • Properties of single-layer MoS2film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2 (2016)
  • Ishihara Seiya ID: 9000402042051

    Articles in CiNii:1

    • Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ion implantation using oil-immersion Raman spectroscopy (2017)
  • Ishihara Seiya ID: 9000402045439

    Articles in CiNii:1

    • Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation (2017)
  • Ishihara Seiya ID: 9000402049086

    Articles in CiNii:1

    • 2018-05-16 (2018)
  • Ishihara Seiya ID: 9000406355577

    Ibaraki University (2019 from CiNii)

    Articles in CiNii:1

    • Research on on-machine 3D measuring system of grinding wheel surface by binocular stereopsis (2019)
  • Seiya ISHIHARA ID: 9000243907055

    Department of Applied Chemistry, Osaka Institute of Technology (2011 from CiNii)

    Articles in CiNii:1

    • Molecular Assembly of Nickel(II) Dithiocarbamate Complexes Derived from Amino Acids (2011)
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