Search Results1-20 of  374

  • ISHIWARA Hiroshi ID: 9000404508490

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Current status and prospects in transistor-type ferroelectric memories (2006)
  • Ishiwara Hiroshi ID: 9000009329105

    Articles in CiNii:1

    • Current Status and Prospects of Ferroelectric Thin Film Devices (1996)
  • Ishiwara Hiroshi ID: 9000009699821

    Articles in CiNii:1

    • Current status and prospects of FET-type ferroelectric memories (2000)
  • Ishiwara Hiroshi ID: 9000024961260

    Articles in CiNii:1

    • Comparative study on metal-ferroelectric-insulator-semiconductor diodes composed of poly(vinyliden fluoride-trifluoroethylene) and poly(methyl metacrylate)-blended poly(vinyliden fluoride-trifluoroethylene) (Special issue: Ferroelectric materials and their applications) (2009)
  • Ishiwara Hiroshi ID: 9000024981533

    Articles in CiNii:1

    • Fabrication and electrical characteristics of metal-ferroelectric-semiconductor field effect transistor based on poly(vinylidene fluoride) (2008)
  • Ishiwara Hiroshi ID: 9000025078139

    Articles in CiNii:1

    • Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2)) (2012)
  • Ishiwara Hiroshi ID: 9000025085735

    Articles in CiNii:1

    • Reduction of Pyrochlore Phase and Pronounced Improvement of Ferroelectric Properties in Ultrathin SrBi2Ta2O9 Films Derived from Bi-Rich Sol-Gel Solution (2005)
  • Ishiwara Hiroshi ID: 9000025120037

    Articles in CiNii:1

    • Improvement in ferroelectric fatigue endurance of poly(methyl metacrylate)-blended poly(vinylidene fluoride-trifluoroethylene) (2010)
  • Ishiwara Hiroshi ID: 9000241498588

    Articles in CiNii:1

    • Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO₂ Gate Insulator (Special Issue : Solid State Devices and Materials) (2013)
  • ISHIWARA H. ID: 9000017716657

    Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology:Dept. of Physics, Division of Quantum Phases and Device, Konkuk University (2010 from CiNii)

    Articles in CiNii:1

    • Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes (2010)
  • ISHIWARA HIROSHI ID: 9000317163201

    Articles in CiNii:1

    • Surgical Treatment of Wolf-Parkinson-White Syndrome, a Report of Three cases (1979)
  • ISHIWARA HIROSHI ID: 9000317163209

    Articles in CiNii:1

    • Surgical Treatment of Common Atrium Associated with Asplenia, with Special Reference to the Abnormal Conduction System (1979)
  • ISHIWARA Hiroshi ID: 9000000507817

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2001 from CiNii)

    Articles in CiNii:1

    • Structural and Electrical Properties of Ferroelectric Pb(Zr_<1-x>Ti_x)O_3-SiO_2 Glass-Ceramic Thin Films Derived by the Sol-Gel Method (2001)
  • ISHIWARA Hiroshi ID: 9000001037705

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2003 from CiNii)

    Articles in CiNii:1

    • Praseodymium-Substituted Strontium Bismuth Tantalate Films with Saturated Remanent Polarization at 1V (2003)
  • ISHIWARA Hiroshi ID: 9000001440606

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Improvement of Ferroelectric Properties in RF-Magnetron-Sputtered SrBi_2Ta_2O_9 Thin Films by Addition of Si Atoms (2005)
  • ISHIWARA Hiroshi ID: 9000001534172

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2005 from CiNii)

    Articles in CiNii:1

    • Reduced Leakage Current in BiFeO_3 Thin Films on Si Substrates Formed by a Chemical Solution Method (2005)
  • ISHIWARA Hiroshi ID: 9000001718113

    Precision and Intelligence Laboratory, Tokyo Institute of Technology (1998 from CiNii)

    Articles in CiNii:1

    • Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage (1998)
  • ISHIWARA Hiroshi ID: 9000001719362

    Frontier Collaborative Research Center, Tokyo Institute of Technology (2000 from CiNii)

    Articles in CiNii:1

    • A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit (2000)
  • ISHIWARA Hiroshi ID: 9000001839006

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology (2006 from CiNii)

    Articles in CiNii:1

    • Cr-Doping Effects to Electrical Properties of BiFeO_3 Thin Films Formed by Chemical Solution Deposition (2006)
  • ISHIWARA Hiroshi ID: 9000002166080

    Tokyo Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • PREFACE (2004)
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