Search Results1-20 of  112

  • ISU Toshiro ID: 9000003292220

    the Advanced Technology R&D Center, Mitsubishi Electric Corp. (1998 from CiNii)

    Articles in CiNii:5

    • Theory of Nuclear Magnetic Relaxation in KCoF3 Having Residual Orbital Moment (1978)
    • A Design Consideration of Gain - Switching Semiconductor Lasers (1998)
    • Electrical Characterization of Au/p-ZnSe Structure (1996)
  • ISU Toshiro ID: 9000004821495

    The authors are with Mitsubishi Electric Corporation (2000 from CiNii)

    Articles in CiNii:1

    • Large Third Order Nonlinear Optical Response of Exciton by Controlling the Thickness of GaAs Thin Films (2000)
  • ISU Toshiro ID: 9000005689031

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Diversity of Quantum Dynamical Tunneling Induced by Sublevel Transitions with a Train of Laser Pulses (1998)
  • ISU Toshiro ID: 9000005716259

    Mitsubishi Electric Co., Ltd., (1994 from CiNii)

    Articles in CiNii:1

    • Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy (1994)
  • ISU Toshiro ID: 9000005884932

    Nara Institute Science and Technology (2005 from CiNii)

    Articles in CiNii:3

    • Oxidation Resistance of vitamin E Additive Ultra High Molecular Weight Polyethylene for an Artificial Knee Joint (2004)
    • The Crystallinity on Grain and Grain Boundary of Ultra High Molecular Weight Polyethylene for Artificial Knee Joint (2004)
    • 813 The Performances of Vitamin E (D, L-α-Tocopherol) added Ultra High Molecular Weight Polyethylene for Artificial Knee Components (2005)
  • ISU Toshiro ID: 9000006681237

    Department of Nano-Technology, Institute of Technology and Science, The University of Tokushima (2008 from CiNii)

    Articles in CiNii:2

    • Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films (2008)
    • Ultrafast Response Induced by Interference Effects between Weakly Confined Exciton States (2008)
  • ISU Toshiro ID: 9000016375412

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2011 from CiNii)

    Articles in CiNii:4

    • A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications (2008)
    • Enhanced Optical Kerr Signal of GaAs/AlAs Multilayer Cavity with InAs Quantum Dots Embedded in Strain-Relaxed Barriers (2009)
    • Optical Anisotropy of Strongly Enhanced Sum Frequency Generation in (113)B GaAs/AlAs Coupled Multilayer Cavity (2010)
  • ISU Toshiro ID: 9000024254619

    Articles in CiNii:1

    • Degradation diagnosis of ultrahigh-molecular weight polyethylene with terahertz-time-domain spectroscopy (2004)
  • ISU Toshiro ID: 9000107341997

    Institute of Technology and Science, The University of Tokushima (2008 from CiNii)

    Articles in CiNii:1

    • Ultrahigh Relative Refractive Index Contrast GaAs Nanowire Waveguides (2008)
  • ISU Toshiro ID: 9000107374165

    Semiconductor Research Laboratory, Mitsubishi Electric Corporation (1998 from CiNii)

    Articles in CiNii:1

    • Laser-Induced Enhancement of Electron-Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well (1998)
  • ISU Toshiro ID: 9000242367319

    Center for Frontier Research of Engineering Institute of Technology and Science The University of Tokushima (2012 from CiNii)

    Articles in CiNii:1

    • ED2012-96 Generation of Terahertz Radiation from a Semiconductor Coupled Multilayer Cavity (2012)
  • ISU Toshiro ID: 9000253325540

    Central Research Laboratory Mitsubishi Electric Corporation. (1992 from CiNii)

    Articles in CiNii:1

    • Microprobe reflection high energy electron diffraction (1992)
  • ISU Toshiro ID: 9000253327318

    Advanced Technology R&D Center, Mitsubishi Electric Corporation (1999 from CiNii)

    Articles in CiNii:1

    • An overview of today's quantum Computers (1999)
  • ISU Toshiro ID: 9000258700795

    Graduate School of Materials Science, Nara Institute of Science and Technology|Ion Engineering Research Institute Corporation (2004 from CiNii)

    Articles in CiNii:1

    • Oxidation Resistance of vitamin E Added Ultra High Molecular Weight Polyethylene for Artificial Knee Joint (2004)
  • ISU Toshiro ID: 9000316617598

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2015 from CiNii)

    Articles in CiNii:1

    • Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source (2015)
  • ISU Toshiro ID: 9000316623046

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2015 from CiNii)

    Articles in CiNii:1

    • Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source (2015)
  • ISU Toshiro ID: 9000316623253

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2015 from CiNii)

    Articles in CiNii:1

    • Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source (2015)
  • ISU Toshiro ID: 9000316623778

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2015 from CiNii)

    Articles in CiNii:1

    • Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source (2015)
  • ISU Toshiro ID: 9000345337023

    Graduate School of Science and Technology, Tokushima University (2017 from CiNii)

    Articles in CiNii:1

    • Surface Emitting Devices Based on a Semiconductor Coupled Multilayer Cavity for Novel Terahertz Light Sources (2017)
  • Isu Toshiro ID: 9000003390635

    Center for Frontier Research of Engineering, Institute of Technology and Science, The University of Tokushima (2015 from CiNii)

    Articles in CiNii:39

    • An overview of today's quantum computers. (1999)
    • Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers (2010)
    • 超高速光スイッチに向けた高非線形半導体材料 (特集 化合物半導体) (2002)
Page Top