Search Results1-20 of  52

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  • IWAMURA Hidetoshi ID: 9000003273727

    Department of Physics, College of Science, Tokyo Institute of Technology (1975 from CiNii)

    Articles in CiNii:3

    • Ferroelectric Behavior Observed in CaF_2 (1974)
    • A Ferroelectric Type of Hysteresis Loop Observed in BeO (1973)
    • Ferroelectricity in Ca_2Pb(C_2H_5CO_2)_6 (1975)
  • IWAMURA Hidetoshi ID: 9000005541468

    NTT Opto-electronics Laboratories (1998 from CiNii)

    Articles in CiNii:2

    • Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy (1997)
    • Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy (1998)
  • IWAMURA Hidetoshi ID: 9000005680167

    NTT Opto-electronics Laboratories (1997 from CiNii)

    Articles in CiNii:1

    • Transport Properties in InP/InAlAs Type II Single Heterostructure (1997)
  • IWAMURA Hidetoshi ID: 9000253322763

    Musashino Electrical Communicaton Laboratories, Nippon Telegragh and Telephone Public Corporation. (1983 from CiNii)

    Articles in CiNii:1

    • Optical Properties of Superlattice and Quantum-Well Laser Diode (1983)
  • Iwamura Hidetoshi ID: 9000252758664

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Optical Absorption of GaAs–AlGaAs Superlattice under Electric Field (1985)
  • Iwamura Hidetoshi ID: 9000252758936

    NTT Electrical Communication Laboratories (1985 from CiNii)

    Articles in CiNii:1

    • Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy (1985)
  • Iwamura Hidetoshi ID: 9000252761967

    NTT Opto-electronics Laboratories (1989 from CiNii)

    Articles in CiNii:1

    • Compositional Disordering of In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing (1989)
  • Iwamura Hidetoshi ID: 9000252762487

    NTT Opto-electronics Laboratories (1990 from CiNii)

    Articles in CiNii:1

    • Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes (1990)
  • Iwamura Hidetoshi ID: 9000252953388

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1983 from CiNii)

    Articles in CiNii:1

    • A Segmented Electrode Multi-Quantum-Well Laser Diode (1983)
  • Iwamura Hidetoshi ID: 9000252954967

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1984 from CiNii)

    Articles in CiNii:1

    • Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High Temperature (1984)
  • Iwamura Hidetoshi ID: 9000252956893

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy (1985)
  • Iwamura Hidetoshi ID: 9000252956954

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Comparison between GaAs and Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>As Quantum Wells in the Light Emission Limit (1985)
  • Iwamura Hidetoshi ID: 9000252957221

    Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation (1985 from CiNii)

    Articles in CiNii:1

    • Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption (1985)
  • Iwamura Hidetoshi ID: 9000252983041

    NTT Opto-Electronics Laboratories (1992 from CiNii)

    Articles in CiNii:1

    • InP/InAlAs Resonant Tunneling Diodes Grown by Gas Source Molecular Beam Epitaxy (1992)
  • Iwamura Hidetoshi ID: 9000254126462

    Department of Physics, College of Science, Tokyo Institute of Technology (1973 from CiNii)

    Articles in CiNii:1

    • A Ferroelectric Type of Hysteresis Loop Observed in BeO (1973)
  • Iwamura Hidetoshi ID: 9000254127116

    Department of Physics, College of Science, Tokyo Institute of Technology (1974 from CiNii)

    Articles in CiNii:1

    • Ferroelectric Behavior Observed in CaF<SUB>2</SUB> (1974)
  • Iwamura Hidetoshi ID: 9000254550582

    Department of Physics, College of Science, Tokyo Institute of Technology (1975 from CiNii)

    Articles in CiNii:1

    • Ferroelectricity in Ca<SUB>2</SUB>Pb(C<SUB>2</SUB>H<SUB>5</SUB>CO<SUB>2</SUB>)<SUB>6</SUB> (1975)
  • Iwamura Hidetoshi ID: 9000258137864

    NTT Opto–electronics Laboratories, 3–1 Morinosato, Wakamiya, Atsugi–shi, Kanagawa 243–01, Japan (1997 from CiNii)

    Articles in CiNii:1

    • Transport Properties in InP/InAlAs Type II Single Heterostructure. (1997)
  • Iwamura Hidetoshi ID: 9000258140595

    NTT Opto–electronics Laboratories, 3–1, Morinosato Wakamiya, Atsugi–Shi, 243–01, Japan (1998 from CiNii)

    Articles in CiNii:1

    • Cross-Sectional Potential Imaging of Compound Semiconductor Heterostructure by Kelvin Probe Force Microscopy. (1998)
  • Iwamura Hidetoshi ID: 9000283157905

    Articles in CiNii:1

    • Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy. (1994)
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