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  • JEONG YounSeok ID: 9000001838764

    Semiconductor Device and Material Laboratory, Samsung Advanced Institute of Technology (SAIT) (2006 from CiNii)

    Articles in CiNii:1

    • Retention Mechanism of Localized Silicon-Oxide-Nitride-Oxide-Silicon Embedded NOR Device (2006)
  • JEONG Younseok ID: 9000002173270

    Semiconductor R&D Center, Memory Business, Samsung Electronics Co., LTD. (2006 from CiNii)

    Articles in CiNii:1

    • A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage (2006)
  • JEONG Younseok ID: 9000107389052

    Material and Device Lab., Samsung Advanced Institute of Technology (2004 from CiNii)

    Articles in CiNii:1

    • 70nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method (2004)
  • Jeong YounSeok ID: 9000401756646

    Articles in CiNii:1

    • Retention Mechanism of Localized Silicon-Oxide-Nitride-Oxide-Silicon Embedded NOR Device (2006)
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