Search Results1-20 of  51

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  • KACHI Tetsu ID: 9000404506751

    Toyota Central R&D Labs., Inc. （2012 from CiNii）

    Articles in CiNii:1

    • Automotive applications of wide-gap semiconductor power devices （2012）
  • KACHI Tetsu ID: 9000404508911

    Toyota Central R&D Labs., Inc. （2005 from CiNii）

    Articles in CiNii:1

    • GaN-based power device technology （2005）
  • Kachi Tetsu ID: 9000025021951

    Articles in CiNii:1

    • Electrical characterization of GaN p-n junctions grown on freestanding GaN substrates by metal-organic chemical vapor deposition （2011）
  • KACHI Tetsu ID: 9000001884815

    Toyota Central R&D Laboratories, Inc. （2008 from CiNii）

    Articles in CiNii:2

    • Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method （2007）
    • GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching （2008）
  • KACHI Tetsu ID: 9000002174308

    TOYOTA CENTRAL R&D LABS., INC （2006 from CiNii）

    Articles in CiNii:1

    • Recent Advances on GaN Power Devices （2006）
  • KACHI Tetsu ID: 9000004779000

    Articles in CiNii:39

    • GaN-based power device technology （2005）
    • Measurement of Gloss for Wrinkly Texture of Automobile Interior （1995）
    • Excess carrier lifetime measurement in GaN etched by ICP with the μ-PCD method （2005）
  • KACHI Tetsu ID: 9000005757842

    Toyota Central Research and Development Laboratories, Inc. （2002 from CiNii）

    Articles in CiNii:2

    • N/Ge Co-Implantation into GaN for N-Type Doping （2001）
    • N/Ge Co-Implantation into GaN for N-Type Doping （2002）
  • KACHI Tetsu ID: 9000005841787

    KACHI,TetsuToyota Central Research & Development Laboratories, Inc. （2001 from CiNii）

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure （2001）
  • KACHI Tetsu ID: 9000006838247

    Toyota Central R & D Laboratories, Inc. （2008 from CiNii）

    Articles in CiNii:1

    • Recent Advances on GaN Vertical Power Devices （2008）
  • KACHI Tetsu ID: 9000006839145

    Toyota Central R & D Laboratories, Inc. （2008 from CiNii）

    Articles in CiNii:1

    • Recent Advances on GaN Vertical Power Devices （2008）
  • KACHI Tetsu ID: 9000017504668

    Toyota Central R&D Labs., Inc. （2010 from CiNii）

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process （2010）
  • KACHI Tetsu ID: 9000019238090

    Toyota Central R&D Labs. Inc. （2012 from CiNii）

    Articles in CiNii:1

    • FOREWORD （2012）
  • KACHI Tetsu ID: 9000021629742

    Toyota Central Research and Development Labs., Inc. （2012 from CiNii）

    Articles in CiNii:1

    • FOREWORD （2012）
  • KACHI Tetsu ID: 9000107375598

    Articles in CiNii:1

    • Characteristics of GaN p-n diode with damage layer induced by ICP plasma process （2010）
  • Kachi Tetsu ID: 9000083525210

    Articles in CiNii:1

    • Interface Properties of Al$_{2}$O$_{3}$/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces （2012）
  • Kachi Tetsu ID: 9000238294401

    Articles in CiNii:1

    • Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer （2008）
  • Kachi Tetsu ID: 9000242078043

    TOYOTA Central R&D Labs., Inc.|Japan Science and Technology Agency (JST), CREST （2013 from CiNii）

    Articles in CiNii:1

    • Current status of GaN power devices （2013）
  • Kachi Tetsu ID: 9000252967626

    Toyota Central Research & Development Lab., Inc. （1988 from CiNii）

    Articles in CiNii:1

    • New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition （1988）
  • Kachi Tetsu ID: 9000252983393

    TOYOTA Central R & D Labs., Inc. （1992 from CiNii）

    Articles in CiNii:1

    • Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon （1992）
  • Kachi Tetsu ID: 9000258154381

    Toyota Central Research & Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan （2001 from CiNii）

    Articles in CiNii:1

    • Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure. （2001）
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