Search Results1-20 of  20

  • KAIBE Hiromasa T. ID: 9000005557608

    Research Center, Komatsu Ltd. (2004 from CiNii)

    Articles in CiNii:8

    • Grain Size Effect on Thermoelectric Properties of PbTe Prepared by Spark Plasma Sintering (2001)
    • Improved Thermoelectric Properties in Structure Controlled Ag-Sb-Te System (2004)
    • Temperature hysteresis of the resistivity for PbTe thermoelectric material (1997)
  • KAIBE Hiromasa T. ID: 9000253635815

    Department of Electronics and Information Engineering, Tokyo Metropolitan University (2000 from CiNii)

    Articles in CiNii:1

    • Possibility of improvement of thermoelectric properties of Pb1-xSnxTe by the Functionally Graded Material. (2000)
  • KAIBE T. Hiromasa ID: 9000000034234

    Dept.of Electronics and Information Eng.,Tokyo Metropolitan Univ. (2000 from CiNii)

    Articles in CiNii:5

    • Evaluation of Thermoelectric Properties of Impurity-Doped PbTe (1997)
    • Single crystal growth and thermoelectric properties of Bi_2Te_3 compounds with graded carrier concentration (1996)
    • Preparation and Thermoelectric Properties of PbTe-FGM Metrics by Gas Transport Method (2000)
  • KAIBE Hiromasa ID: 9000000207611

    Department of Electronics and Information Engineering, Tokyo Metropolitan University (1998 from CiNii)

    Articles in CiNii:1

    • Evaluation of Thermoelectric Properties of Impurity-doped PbTe (1998)
  • KAIBE Hiromasa ID: 9000001581205

    Research Center, Komatsu Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Doping Effects on Thermoelectric Properties of Higher Manganese Silicides (HMSs, MnSi_<1.74>) and Characterization of Thermoelectric Generating Module using p-Type (Al, Ge and Mo)-doped HMSs and n-Type Mg_2Si_<0.4>Sn_<0.6> Legs (2005)
  • KAIBE Hiromasa T. ID: 9000005652995

    Department of Electronics and Information Engineering, Tokyo Metropolitan University (1994 from CiNii)

    Articles in CiNii:1

    • Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy (1994)
  • Kaibe Hiromasa T. ID: 9000253251961

    Department of Electronics and Information Engineering, Tokyo Metropolitan University (1998 from CiNii)

    Articles in CiNii:1

    • Evaluation of Thermoelectric Properties of Impurity-doped PbTe (1998)
  • Kaibe Hiromasa T. ID: 9000258120386

    Department of Electronics and Information Engineering, Tokyo Metropolitan University, 1–1 Minami–ohsawa, Hachiohji, Tokyo 192–03 (1994 from CiNii)

    Articles in CiNii:1

    • Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy. (1994)
  • Kaibe Hiromasa T. ID: 9000391530182

    Tokyo Metropolitan University (1996 from CiNii)

    Articles in CiNii:1

    • Single crystal growth and thermoelectric properties of Bi<sub>2</sub>Te<sub>3</sub> compounds with graded carrier concentration (1996)
  • Kaibe Hiromasa T. ID: 9000392807739

    Department of Electronics and Information Engineering, Tokyo Metropolitan University (1999 from CiNii)

    Articles in CiNii:1

    • Grain Size Effect on Thermoelectric Properties of PbTe by Spark Plasma Sintering (1999)
  • Kaibe Hiromasa T. ID: 9000401622089

    Articles in CiNii:1

    • Low-Temperature Fluorination of GaAs Surface by CF4Plasma (1991)
  • Kaibe Hiromasa T. ID: 9000401646301

    Articles in CiNii:1

    • Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy (1994)
  • Kaibe T. Hiromasa ID: 9000392812077

    Faculty of Technology, Tokyo Metropolitan University (1997 from CiNii)

    Articles in CiNii:1

    • Evaluation of Thermoelectric Properties of Impurity-Doped PbTe (1997)
  • Kaibe Hiromasa ID: 9000025119602

    Articles in CiNii:1

    • Development of Transient Measurement Method for investigating Thermoelectric Properties in High Temperature Region (2006)
  • Kaibe Hiromasa ID: 9000253026015

    Department of Instrumentation Engineering, Faculty of Science and Technology, Keio University (1988 from CiNii)

    Articles in CiNii:1

    • Slip Casting and Thermoelectric Property of CrSi<SUB>2</SUB> (1988)
  • Kaibe Hiromasa ID: 9000258182469

    Research Center, Komatsu Ltd. (2005 from CiNii)

    Articles in CiNii:1

    • Doping Effects on Thermoelectric Properties of Higher Manganese Silicides (HMSs, MnSi1.74) and Characterization of Thermoelectric Generating Module using p-Type (Al, Ge and Mo)-doped HMSs and n-Type Mg2Si0.4Sn0.6 Legs (2005)
  • Kaibe Hiromasa ID: 9000392791012

    Graduate Student, Keio University (1989 from CiNii)

    Articles in CiNii:1

    • Thermoelectric Properties of n-Type Sintered Bi<SUB>2</SUB>Te<SUB>2.85</SUB>Se<SUB>0.15</SUB> (1989)
  • Kaibe Hiromasa ID: 9000401737991

    Articles in CiNii:1

    • Doping Effects on Thermoelectric Properties of Higher Manganese Silicides (HMSs, MnSi1.74) and Characterization of Thermoelectric Generating Module usingp-Type (Al, Ge and Mo)-doped HMSs andn-Type Mg2Si0.4Sn0.6Legs (2005)
  • Kaibe Hiromasa T. ID: 9000252977241

    Department of Electrical Engineering, Tokyo Metropolitan University (1991 from CiNii)

    Articles in CiNii:1

    • Low-Temperature Fluorination of GaAs Surface by CF<SUB>4</SUB> Plasma (1991)
  • Kaibe Hiromasa T. ID: 9000392726768

    Articles in CiNii:1

    • Low-Temperature Fluorination of GaAs Surface by CF<SUB>4</SUB> Plasma (1991)
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