Search Results1-9 of  9

  • KAINOSHO Keiji ID: 9000005744043

    Japan Energy Corporation (2004 from CiNii)

    Articles in CiNii:3

    • Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth (2004)
    • Growth of 100-mm-Diameter <100> InP Single Crystals by the Vertical Gradient Freezing Method (1999)
    • Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure (1999)
  • KAINOSHO Keiji ID: 9000005904485

    Central Research Lab., Japan Energy Co. (2000 from CiNii)

    Articles in CiNii:1

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO_3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale (2000)
  • Kainosho Keiji ID: 9000004338340

    Japan Energy Corporation (2002 from CiNii)

    Articles in CiNii:4

    • Recent Developments in InP Crystal Growth(<Special Issue>: To Realize the perfect Crystallization) (1998)
    • Hydride vapor phase epitaxy of GaN on NdGaO_3 substrates (2000)
    • GaN/AlGaN Fabrication of multi-quantum wells on GaN single crystals by RF-MBE (2002)
  • Kainosho Keiji ID: 9000258145994

    Central Research and Development Laboratory, Japan Energy Corporation, 3–17–35 Niizo–Minami, Toda, Saitama 335–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure. (1999)
  • Kainosho Keiji ID: 9000258146050

    Central R & D Laboratory, Japan Energy Corporation, 3–17–35 Niizo–Minami, Toda, Saitama 335–8502, Japan (1999 from CiNii)

    Articles in CiNii:1

    • Growth of 100-mm-Diameter <100> InP Single Crystals by the Vertical Gradient Freezing Method. (1999)
  • Kainosho Keiji ID: 9000258152005

    Central Research Lab., Japan Energy Co., Toda 335-8502, Japan (2000 from CiNii)

    Articles in CiNii:1

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale. (2000)
  • Kainosho Keiji ID: 9000401685031

    Articles in CiNii:1

    • Growth of 100-mm-Diameter<100>InP Single Crystals by the Vertical Gradient Freezing Method (1999)
  • Kainosho Keiji ID: 9000401685043

    Articles in CiNii:1

    • Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure (1999)
  • Kainosho Keiji ID: 9000401688651

    Articles in CiNii:1

    • Hydride Vapor Phase Epitaxy of GaN on NdGaO3Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale (2000)
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